Authors: ILINSKII AV CHAVEZ F PRUTSKIJ TA SILVAANDRADE F

Citation: Av. Ilinskii et al., AN OPTICAL METHOD FOR DETERMINING THE IONIZATION-ENERGY OF THE CENTERS CONTROLLING CHARGE-TRANSFER IN GAAS-BASED PIN-STRUCTURES, Revista Mexicana de Fisica, 41(6), 1995, pp. 841-847

Authors: ILINSKII AV KUTSENKO AB MELNIKOV MB

Citation: Av. Ilinskii et al., PHOTOINDUCED DISPLACEMENT OF THE SPACE-CHARGE REGION IN GAAS P-I-N STRUCTURES, Semiconductors, 28(7), 1994, pp. 673-678

Authors: ILINSKII AV KUTSENKO AB

Citation: Av. Ilinskii et Ab. Kutsenko, DETERMINATION OF THE IONIZATION-ENERGY OF A DEEP ACCEPTOR LEVEL IN THE P(0) LAYER OF A GAAS-BASED P-I-N STRUCTURE, Semiconductors, 28(1), 1994, pp. 27-30

Authors: ILINSKII AV KUTSENKO AB MELNIKOV MB

Citation: Av. Ilinskii et al., STEADY-STATE DISTRIBUTIONS OF THE FIELD AND SPACE-CHARGE IN THE INTERIOR OF THE I-LAYER IN A GAAS P-I-N STRUCTURE, Semiconductors, 28(1), 1994, pp. 91-96

Authors: ILINSKII AV CHAVEZ F PRUTSKIJ TA SILVAANDRADE F

Citation: Av. Ilinskii et al., THE ELECTRIC-FIELD DISTRIBUTION OF P-I-N STRUCTURES MADE OF GAAS, Revista Mexicana de Fisica, 40(4), 1994, pp. 602-608