Authors: KRUGER D ILTGEN K HEINEMANN B KURPS R BENNINGHOVEN A

Citation: D. Kruger et al., ULTRASHALLOW SECONDARY-ION MASS-SPECTROSCOPY DEPTH PROFILING OF DOPING SPIKES AND SI SIGE/SI HETEROSTRUCTURES USING DIFFERENT PRIMARY SPECIES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(1), 1998, pp. 292-297

Authors: VANBERKUM JGM COLLART EJH WEEMERS K GRAVESTEIJN DJ ILTGEN K BENNINGHOVEN A NIEHUIS E

Citation: Jgm. Vanberkum et al., SECONDARY-ION MASS-SPECTROMETRY DEPTH PROFILING OF ULTRALOW-ENERGY ION IMPLANTS - PROBLEMS AND SOLUTIONS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(1), 1998, pp. 298-301

Authors: ILTGEN K BENDEL C BENNINGHOVEN A NIEHUIS E

Citation: K. Iltgen et al., OPTIMIZED TIME-OF-FLIGHT SECONDARY-ION MASS-SPECTROSCOPY DEPTH PROFILING WITH A DUAL-BEAM TECHNIQUE, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(3), 1997, pp. 460-464