Authors: ISHIZAKI JY ISHIKAWA Y OHKURI K KAWASE M FUKUI T

Citation: Jy. Ishizaki et al., ULTRA-HIGH-VACUUM SCANNING TUNNELING MICROSCOPE OBSERVATION OF VICINAL (001) GAAS SURFACE AND (117)B GAAS SURFACE GROWN BY METALORGANIC VAPOR-PHASE EPITAXY, Applied surface science, 114, 1997, pp. 343-348

Authors: ISHIZAKI JY GOTO S KISHIDA M FUKUI T HASEGAWA H

Citation: Jy. Ishizaki et al., MECHANISM OF MULTIATOMIC STEP FORMATION DURING METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWTH OF GAAS ON (001) VICINAL SURFACE STUDIED BY ATOMIC-FORCE MICROSCOPY, JPN J A P 1, 33(1B), 1994, pp. 721-726

Authors: GOTO S ISHIZAKI JY FUKUI T HASEGAWA H

Citation: S. Goto et al., GROWTH-BEHAVIOR AND MECHANISM OF ALKYL-DESORPTION-LIMITED EPITAXIAL-GROWTH OF GAAS ON EXACTLY ORIENTED AND VICINAL SUBSTRATES, JPN J A P 1, 33(1B), 1994, pp. 734-741