Authors: ZHVAVYI SP IVLEV GD PILIPENKO VA PONOMAR VN

Citation: Sp. Zhvavyi et al., THERMALLY STIMULATED FLOW OF LOW-MELTING GLASSES DURING PLANARIZATIONOF THE SURFACE PROFILES OF MICROELECTRONIC STRUCTURES, Technical physics, 43(11), 1998, pp. 1395-1396

Authors: IVLEV GD GATSKEVICH EI

Citation: Gd. Ivlev et Ei. Gatskevich, TEMPERATURE-INDUCED CHANGES IN OPTICAL-PROPERTIES OF THE LIQUID-PHASEDURING NANOSECOND LASER MELTING OF SILICON AND GERMANIUM, Semiconductors, 30(11), 1996, pp. 1093-1098

Authors: IVLEV GD

Citation: Gd. Ivlev, OPTICAL PYROMETRY OF SILICON SURFACE FUSE D BY NANOSECOND LASER-EMISSION, Pis'ma v Zurnal tehniceskoj fiziki, 22(11), 1996, pp. 86-90

Authors: GATSKEVICH EI IVLEV GD CHAPLANOV AM

Citation: Ei. Gatskevich et al., MELTING AND SOLIDIFICATION OF THE SURFACE -LAYER OF SINGLE-CRYSTAL SILICON SUBJECTED TO PULSED-LASER HEATING, Kvantovaa elektronika, 22(8), 1995, pp. 805-810

Authors: IVLEV GD NUPRIENOK IS CHAPLANOV AM SHIBKO AN

Citation: Gd. Ivlev et al., EFFECT OF NANOSECOND LASER-HEATING ON PHA SE-COMPOSITION AND ELECTROPHYSICAL CHARACTERISTICS OF THIN-FILM TI-SI SYSTEM, Zurnal tehniceskoj fiziki, 63(7), 1993, pp. 87-92