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Results: 1-2 |
Results: 2
Trapping effects and microwave power performance in AlGaN/GaN HEMTs
Authors: Binari, SC Ikossi, K Roussos, JA Kruppa, W Park, D Dietrich, HB Koleske, DD Wickenden, AE Henry, RL
Citation: Sc. Binari et al., Trapping effects and microwave power performance in AlGaN/GaN HEMTs, IEEE DEVICE, 48(3), 2001, pp. 465-471
Current collapse and the role of carbon in AlGaN/GaN high electron mobility transistors grown by metalorganic vapor-phase epitaxy
Authors: Klein, PB Binari, SC Ikossi, K Wickenden, AE Koleske, DD Henry, RL
Citation: Pb. Klein et al., Current collapse and the role of carbon in AlGaN/GaN high electron mobility transistors grown by metalorganic vapor-phase epitaxy, APPL PHYS L, 79(21), 2001, pp. 3527-3529
Risultati: 1-2 |