Authors: Ghaffour, K Lauer, V Souifi, A Guillot, G Raynaud, C Ortolland, S Iocatelli, ML Chante, JP

Citation: K. Ghaffour et al., Characterisation of deep level trap centres in 6H-SiC p-n junction diodes, MAT SCI E B, 66(1-3), 1999, pp. 106-110