Authors:
Fujimoto, Y
Yonezu, H
Irino, S
Samonji, K
Momose, K
Ohshima, N
Citation: Y. Fujimoto et al., High-quality GaAsxP1-x/In0.13Ga0.87P quantum well structure grown on Si substrate with a very few threading dislocations, JPN J A P 1, 38(12A), 1999, pp. 6645-6649