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Results: 2
New technique to determine gettering efficiency of heavy metals and its application to carbon-ion-implanted Si epitaxial wafers
Authors: Itoga, T Hozawa, K Takeda, K Isomae, S Ohkura, M
Citation: T. Itoga et al., New technique to determine gettering efficiency of heavy metals and its application to carbon-ion-implanted Si epitaxial wafers, JPN J A P 1, 40(4A), 2001, pp. 2105-2109
Simultaneous measurement of size and depth of each defect in a silicon wafer using light scattering at two wavelengths: Principle, limitation and applications of optical shallow defect analyzer
Authors: Takeda, K Isomae, S Ohkura, M Maeshima, M Matsui, S
Citation: K. Takeda et al., Simultaneous measurement of size and depth of each defect in a silicon wafer using light scattering at two wavelengths: Principle, limitation and applications of optical shallow defect analyzer, JPN J A P 1, 38(6A), 1999, pp. 3776-3783
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