Authors:
Raaijmakers, IJ
Sprey, H
Storm, A
Bergman, T
Italiano, J
Meyer, D
Citation: Ij. Raaijmakers et al., Enabling technologies for forming and contacting shallow junctions in Si: HF-vapor cleaning and selective epitaxial growth of Si and SiGe, J VAC SCI B, 17(5), 1999, pp. 2311-2320