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Results:
1-7
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Results: 7
Authors:
Ivanco, J
Kobayashi, H
Almeida, J
Margaritondo, G
Pincik, E
Citation: J. Ivanco et al., Reactivity of Au with ultrathin Si layers: A photoemission study, J APPL PHYS, 90(1), 2001, pp. 345-350
Authors:
Kobayashi, H
Asano, A
Ivanco, J
Takahashi, M
Nishioka, Y
Citation: H. Kobayashi et al., New spectroscopic method for the observation of semiconductor interface states and its application to MOS structure, ACT PHYS SL, 50(4), 2000, pp. 461-475
Authors:
Pincik, E
Jergel, M
Kucera, M
van Swaaij, RACMM
Ivanco, J
Senderak, R
Zeman, M
Mullerova, J
Brunel, M
Citation: E. Pincik et al., Influence of the plasma pretreatment of GaAs(100) and Si(100) surfaces on the optical and structural properties of Si3N4/GaAs and a-SiGe/Si interfaces, APPL SURF S, 166(1-4), 2000, pp. 72-76
Authors:
Ivanco, J
Kobayashi, H
Almeida, J
Margaritondo, G
Citation: J. Ivanco et al., Unpinning of the Au/GaAs interfacial Fermi level by means of ultrathin undoped silicon interlayer inclusion, J APPL PHYS, 87(2), 2000, pp. 795-800
Authors:
Ivanco, J
Dubecky, F
Darmo, J
Krempasky, M
Besse, I
Senderak, R
Citation: J. Ivanco et al., Semi-insulating GaAs-based Schottky contacts in the role of detectors of ionising radiation: An effect of the interface treatment, NUCL INST A, 434(1), 1999, pp. 158-163
Authors:
Ivanco, J
Trenkler, M
Citation: J. Ivanco et M. Trenkler, 3-polytopes with constant face weight, ST SCI M H, 35(1-2), 1999, pp. 1-15
Authors:
Pincik, E
Ivanco, J
Kucera, M
Almeida, J
Jergel, M
Krempasky, M
Margaritondo, G
Brunel, M
Citation: E. Pincik et al., X-ray photoemission and photoreflectance study of Au ultrathin Si/n-GaAs Schottky contacts and hydrogen plasma treated semi-insulating GaAs surfaces, THIN SOL FI, 344, 1999, pp. 328-331
Risultati:
1-7
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