AAAAAA

   
Results: 1-7 |
Results: 7

Authors: LAZAROUK S JAGUIRO P BORISENKO V
Citation: S. Lazarouk et al., INTEGRATED OPTOELECTRONIC UNIT BASED ON POROUS SILICON, Physica status solidi. a, Applied research, 165(1), 1998, pp. 87-90

Authors: LAZAROUK S JAGUIRO P KATSOUBA S MAIELLO G LAMONICA S MASINI G PROVERBIO E FERRARI A
Citation: S. Lazarouk et al., VISUAL DETERMINATION OF THICKNESS AND POROSITY OF POROUS SILICON LAYERS, Thin solid films, 297(1-2), 1997, pp. 97-101

Authors: LAMONICA S MAIELLO G FERRARI A MASINI G LAZAROUK S JAGUIRO P KATSOUBA S
Citation: S. Lamonica et al., PROGRESS IN THE FIELD OF INTEGRATED OPTOELECTRONICS BASED ON POROUS SILICON, Thin solid films, 297(1-2), 1997, pp. 265-267

Authors: LAZAROUK S JAGUIRO P KATSOUBA S LAMONICA S MAIELLO G MASINI G FERRARI A
Citation: S. Lazarouk et al., VISIBLE-LIGHT FROM ALUMINUM-POROUS SILICON SCHOTTKY JUNCTIONS, Thin solid films, 276(1-2), 1996, pp. 168-170

Authors: LAZAROUK S BONDARENKO V JAGUIRO P LACQUANITI N LAMONICA S MAIELLO G MASINI G FERRARI A
Citation: S. Lazarouk et al., ELECTRICAL CHARACTERIZATION OF VISIBLE EMITTING ELECTROLUMINESCENT SCHOTTKY DIODES BASED ON N-TYPE POROUS SILICON AND ON HIGHLY DOPED N-TYPE POROUS POLYSILICON, Journal of non-crystalline solids, 200, 1996, pp. 973-976

Authors: LAZAROUK S JAGUIRO P KATSOUBA S MASINI G LAMONICA S MAIELLO G FERRARI A
Citation: S. Lazarouk et al., STABLE ELECTROLUMINESCENCE FROM REVERSE-BIASED N-TYPE POROUS SILICON-ALUMINUM SCHOTTKY JUNCTION DEVICE, Applied physics letters, 68(15), 1996, pp. 2108-2110

Authors: LAZAROUK S JAGUIRO P KATSOUBA S MASINI G LAMONICA S MAIELLO G FERRARI A
Citation: S. Lazarouk et al., STABLE ELECTROLUMINESCENCE FROM REVERSE-BIASED N-TYPE POROUS SILICON-ALUMINUM SCHOTTKY JUNCTION DEVICE, Applied physics letters, 68(12), 1996, pp. 1646-1648
Risultati: 1-7 |