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JAHNEL F
LANGEGIESELER R
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SIMIONESCU A
PALMETSHOFER L
JAHNEL F
VONCRIEGERN R
TIAN C
STINGEDER G
Citation: G. Hobler et al., VERIFICATION OF MODELS FOR THE SIMULATION OF BORON IMPLANTATION INTO CRYSTALLINE SILICON, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(1), 1996, pp. 272-277
Authors:
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FLIPSEN JTM
RONCARATI R
JAHNEL F
KLEEFSMAN AWF
VLAK JM
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Authors:
VONCRIEGERN R
JAHNEL F
BIANCO M
LANGEGIESELER R
Citation: R. Voncriegern et al., METHOD FOR THE MEASUREMENT OF THE LATERAL DOSE DISTRIBUTION OF DOPANTS AT IMPLANTATION OR DIFFUSION MASK EDGES (LATERAL SIMS), Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(1), 1994, pp. 234-242