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OSTAPENKO S
JASTRZEBSKI L
LAGOWSKI J
SMELTZER RK
Citation: S. Ostapenko et al., ENHANCED HYDROGENATION IN POLYCRYSTALLINE SILICON THIN-FILMS USING LOW-TEMPERATURE ULTRASOUND TREATMENT, Applied physics letters, 68(20), 1996, pp. 2873-2875
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Authors:
JASTRZEBSKI L
HENLEY W
SCHIELEIN D
LAGOWSKI J
Citation: L. Jastrzebski et al., IMPROVEMENT OF DIFFUSION LENGTH IN POLYCRYSTALLINE PHOTOVOLTAIC SILICON BY PHOSPHORUS AND CHLORINE GETTERING, Journal of the Electrochemical Society, 142(11), 1995, pp. 3869-3872
Authors:
OSTAPENKO SS
JASTRZEBSKI L
LAGOWSKI J
SOPORI B
Citation: Ss. Ostapenko et al., INCREASING SHORT MINORITY-CARRIER DIFFUSION LENGTHS IN SOLAR-GRADE POLYCRYSTALLINE SILICON BY ULTRASOUND TREATMENT, Applied physics letters, 65(12), 1994, pp. 1555-1557
Authors:
JASTRZEBSKI L
MILIC O
DEXTER M
LAGOWSKI J
DEBUSK D
NAUKA K
WITOWSKI R
GORDON M
PERSSON E
Citation: L. Jastrzebski et al., MONITORING OF HEAVY-METAL CONTAMINATION DURING CHEMICAL CLEANING WITHSURFACE PHOTOVOLTAGE, Journal of the Electrochemical Society, 140(4), 1993, pp. 1152-1159
Authors:
LAGOWSKI J
EDELMAN P
KONTKIEWICZ AM
MILIC O
HENLEY W
DEXTER M
JASTRZEBSKI L
HOFF AM
Citation: J. Lagowski et al., IRON DETECTION IN THE PART PER QUADRILLION RANGE IN SILICON USING SURFACE PHOTOVOLTAGE AND PHOTODISSOCIATION OF IRON-BORON PAIRS, Applied physics letters, 63(22), 1993, pp. 3043-3045
Authors:
LAGOWSKI J
KONTKIEWICZ AM
JASTRZEBSKI L
EDELMAN P
Citation: J. Lagowski et al., METHOD FOR THE MEASUREMENT OF LONG MINORITY-CARRIER DIFFUSION LENGTHSEXCEEDING WAFER THICKNESS, Applied physics letters, 63(21), 1993, pp. 2902-2904