Authors:
HUGHES OH
KORAKAKIS D
CHENG TS
BLANT AV
JEFFS NJ
FOXON CT
Citation: Oh. Hughes et al., REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION STUDIES OF WURTZITE GAN GROWN BY MOLECULAR-BEAM EPITAXY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 2237-2241
Authors:
BELKOV VV
BOTNARYUK VM
FEDOROV LM
GONCHARUK IN
NOVIKOV SV
ULIN VP
ZHILYAEV YV
CHENG TS
JEFFS NJ
FOXON CT
KATSAVETS NI
HARRISON I
Citation: Vv. Belkov et al., HYDRIDE VAPOR-PHASE EPITAXY OF GAN ON MOLECULAR-BEAM EPITAXIAL GAN SUBSTRATES, Journal of crystal growth, 187(1), 1998, pp. 29-34
Authors:
BLANT AV
CHENG TS
JEFFS NJ
FOXON CT
BAILEY C
HARRISON PG
DENT AJ
MOSSELMANS JFW
Citation: Av. Blant et al., EXAFS STUDIES OF PLASMA-ENHANCED MBE GROWN GROUP III-NITRIDES, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 38-41