Authors: SARAVANAN S JEGANATHAN K AROKIARAJ J BASKAR K RAMASAMY P JIMBO T SOGA T UMENO M

Citation: S. Saravanan et al., OPTICAL AND STRUCTURAL QUALITY OF GAAS EPILAYERS FROM GALLIUM, BISMUTH MIXED-SOLVENTS BY LIQUID-PHASE EPITAXY, JPN J A P 1, 37(5A), 1998, pp. 2598-2601

Authors: JEGANATHAN K SARAVANAN S BASKAR K KUMAR J

Citation: K. Jeganathan et al., ON THE BISMUTH COMPOSITION DEPENDENT CONCENTRATION OF ARSENIC ATOMS DURING LPE GROWTH OF GAAS-LAYERS FROM GA-AS-BI SOLUTION, Physica status solidi. a, Applied research, 165(2), 1998, pp. 437-443

Authors: SARAVANAN S JEGANATHAN K BASKAR K JIMBO T SOGA T UMENO M

Citation: S. Saravanan et al., CRYSTAL-GROWTH OF HIGH-QUALITY HYBRID GAAS HETEROEPITAXIAL LAYERS ON SI SUBSTRATE BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION AND LIQUID-PHASE EPITAXY, Journal of crystal growth, 192(1-2), 1998, pp. 23-27

Authors: SARAVANAN S JEGANATHAN K BASKAR K KUMAR J SUBRAMANIAN C SOGA T JIMBO T ARORA BM UMENO M

Citation: S. Saravanan et al., HIGH-QUALITY GAAS EPITAXIAL LAYERS GROWN FROM GA-AS-BI SOLUTIONS BY LIQUID-PHASE EPITAXY, JPN J A P 1, 36(6A), 1997, pp. 3385-3388

Authors: JEGANATHAN K SARAVANAN S BASKAR K KUMAR J

Citation: K. Jeganathan et al., INVESTIGATIONS ON THE CONCENTRATION PROFILES OF ARSENIC ATOMS DURING PHASE EPITAXIAL-GROWTH OF GAAS FROM GA-AS-BI SOLUTION, Materials chemistry and physics, 49(2), 1997, pp. 141-145