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Results: 5

Authors: JENCIC I ROBERTSON IM
Citation: I. Jencic et Im. Robertson, LOW-ENERGY-ELECTRON BEAM-INDUCED REGROWTH OF ISOLATED AMORPHOUS ZONESIN SI AND GE, Journal of materials research, 11(9), 1996, pp. 2152-2157

Authors: ROBERTSON IM JENCIC I
Citation: Im. Robertson et I. Jencic, REGROWTH OF AMORPHOUS REGIONS IN SEMICONDUCTORS BY SUBTHRESHOLD ELECTRON-BEAMS, Journal of nuclear materials, 239(1-3), 1996, pp. 273-278

Authors: JENCIC I PETERNELJ J ROBERTSON IM
Citation: I. Jencic et al., MODELING OF AMORPHOUS ZONES IN SEMICONDUCTORS BY USING THE RANDOMIZATION-AND-RELAXATION METHOD, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 102(1-4), 1995, pp. 202-206

Authors: JENCIC I BENCH MW ROBERTSON IM KIRK MA
Citation: I. Jencic et al., ELECTRON-BEAM-INDUCED CRYSTALLIZATION OF ISOLATED AMORPHOUS REGIONS IN SI, GE, GAP, AND GAAS, Journal of applied physics, 78(2), 1995, pp. 974-982

Authors: JENCIC I PETERNELJ J ROBERTSON IM
Citation: I. Jencic et al., A COMPUTER-SIMULATION OF LOCAL AMORPHIZATION IN III-V COMPOUNDS, Journal of physics. Condensed matter, 5(43), 1993, pp. 7907-7922
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