Authors: JENNY JR VANNOSTRAND JE KASPI R

Citation: Jr. Jenny et al., THE EFFECT OF AL ON GA DESORPTION DURING GAS SOURCE-MOLECULAR BEAM EPITAXIAL-GROWTH OF ALGAN, Applied physics letters, 72(1), 1998, pp. 85-87

Authors: JENNY JR KASPI R EVANS KR

Citation: Jr. Jenny et al., GROWTH-KINETICS OF GAN GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 175, 1997, pp. 89-93

Authors: JENNY JR SKOWRONSKI M MITCHEL WC HOBGOOD HM GLASS RC AUGUSTINE G HOPKINS RH

Citation: Jr. Jenny et al., OPTICAL AND ELECTRICAL CHARACTERIZATION OF BORON IMPURITIES IN SILICON-CARBIDE GROWN BY PHYSICAL VAPOR TRANSPORT, Journal of applied physics, 79(5), 1996, pp. 2326-2331

Authors: JENNY JR SKOWRONSKI J MITCHEL WC HOBGOOD HM GLASS RC AUGUSTINE G HOPKINS RH

Citation: Jr. Jenny et al., DEEP-LEVEL TRANSIENT SPECTROSCOPIC AND HALL-EFFECT INVESTIGATION OF THE POSITION OF THE VANADIUM ACCEPTOR LEVEL IN 4H AND 6H SIC, Applied physics letters, 68(14), 1996, pp. 1963-1965

Authors: JENNY JR SKOWRONSKI M MITCHEL WC HOBGOOD HM GLASS RC AUGUSTINE G HOPKINS RH

Citation: Jr. Jenny et al., ON THE COMPENSATION MECHANISM IN HIGH-RESISTIVITY 6H-SIC DOPED WITH VANADIUM, Journal of applied physics, 78(6), 1995, pp. 3839-3842

Authors: JENNY JR SKOWRONSKI M MITCHEL WC HOBGOOD HM GLASS RC AUGUSTINE G HOPKINS RH

Citation: Jr. Jenny et al., VANADIUM RELATED NEAR-BAND-EDGE ABSORPTION-BANDS IN 3 SIC POLYTYPES, Journal of applied physics, 78(5), 1995, pp. 3160-3163