Authors: JEON TI GRISCHKOWSKY D

Citation: Ti. Jeon et D. Grischkowsky, CHARACTERIZATION OF OPTICALLY DENSE, DOPED SEMICONDUCTORS BY REFLECTION THZ TIME-DOMAIN SPECTROSCOPY, Applied physics letters, 72(23), 1998, pp. 3032-3034

Authors: JEON TI GRISCHKOWSKY D

Citation: Ti. Jeon et D. Grischkowsky, OBSERVATION OF A COLE-DAVIDSON TYPE COMPLEX CONDUCTIVITY IN THE LIMITOF VERY-LOW CARRIER DENSITIES IN DOPED SILICON, Applied physics letters, 72(18), 1998, pp. 2259-2261

Authors: JEON TI GRISCHKOWSKY D

Citation: Ti. Jeon et D. Grischkowsky, NATURE OF CONDUCTION IN DOPED SILICON, Physical review letters, 78(6), 1997, pp. 1106-1109