AAAAAA

   
Results: 1-6 |
Results: 6

Authors: LAI KK MAK AW WENDLING TPHF JIAN P HATHCOCK B
Citation: Kk. Lai et al., CHARACTERIZATION OF A PECVD WXN PROCESS USING N-2, H-2, AND WF6, Thin solid films, 332(1-2), 1998, pp. 329-334

Authors: JIAN P IVEY DG BRUCE R KNIGHT G
Citation: P. Jian et al., MICROSTRUCTURAL STUDY OF AU-PD-ZN OHMIC CONTACTS TO P-TYPE INGAASP-INP, Journal of materials science. Materials in electronics, 7(2), 1996, pp. 77-83

Authors: JIAN P IVEY DG EICHER S LESTER TP
Citation: P. Jian et al., MICROSTRUCTURAL ANALYSIS OF A AU PT/PD/ZN OHMIC CONTACT TO AN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR/, Journal of electronic materials, 25(9), 1996, pp. 1478-1486

Authors: IVEY DG JIAN P
Citation: Dg. Ivey et P. Jian, MICROSTRUCTURAL ANALYSIS OF AU PT/TI CONTACTS TO P-TYPE INGAAS/, Journal of materials science. Materials in electronics, 6(4), 1995, pp. 219-227

Authors: IVEY DG JIAN P
Citation: Dg. Ivey et P. Jian, METALLURGY OF OHMIC CONTACTS TO INP, Canadian metallurgical quarterly, 34(2), 1995, pp. 85-113

Authors: JIAN P IVEY DG BRUCE R KNIGHT G
Citation: P. Jian et al., OHMIC CONTACT FORMATION IN PALLADIUM-BASED METALLIZATIONS TO N-TYPE INP, Journal of electronic materials, 23(9), 1994, pp. 953-962
Risultati: 1-6 |