Authors: BANERJEE S PARK YJ LEE DR JEONG YH LEE KB YOON SB JO BH CHOI HM CHO WJ

Citation: S. Banerjee et al., EFFECTS OF OXIDATION PROCESS ON INTERFACE ROUGHNESS OF GATE OXIDES ONSILICON - X-RAY REFLECTIVITY STUDY, Applied physics letters, 72(4), 1998, pp. 433-435

Authors: KIM DG JO BH YOU KR AHN DS

Citation: Dg. Kim et al., APOPTOSIS INDUCED BY RETINOIC ACID IN HEP 3B CELLS IN-VITRO, Cancer letters, 107(1), 1996, pp. 149-159

Authors: JO BH VOOK RW

Citation: Bh. Jo et Rw. Vook, DEPENDENCE OF ELECTROMIGRATION RATE ON APPLIED ELECTRIC-POTENTIAL, Applied surface science, 89(3), 1995, pp. 237-249

Authors: JO BH VOOK RW

Citation: Bh. Jo et Rw. Vook, IN-SITU ULTRA-HIGH-VACUUM STUDIES OF ELECTROMIGRATION IN COPPER-FILMS, Thin solid films, 262(1-2), 1995, pp. 129-134