Authors:
JOHNSON MAL
BROWN JD
ELMASRY NA
COOK JW
SCHETZINA JF
KONG HS
EDMOND JA
Citation: Mal. Johnson et al., MOLECULAR-BEAM EPITAXY GROWTH AND PROPERTIES OF GAN, INGAN, AND GAN INGAN QUANTUM-WELL STRUCTURES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1282-1285
Authors:
JOHNSON MAL
HUGHES WC
ROWLAND WH
COOK JW
SCHETZINA JF
LEONARD M
KONG HS
EDMOND JA
ZAVADA J
Citation: Mal. Johnson et al., GROWTH OF GAN, INGAN, AND ALGAN FILMS AND QUANTUM-WELL STRUCTURES BY MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 175, 1997, pp. 72-78
Authors:
HUGHES WC
BONEY C
JOHNSON MAL
COOK JW
SCHETZINA JF
Citation: Wc. Hughes et al., SURFACE PREPARATION OF ZNSE SUBSTRATES FOR MBE GROWTH OF II-VI LIGHT EMITTERS, Journal of crystal growth, 175, 1997, pp. 546-551
Authors:
JOHNSON MAL
FUJITA S
ROWLAND WH
BOWERS KA
HUGHES WC
HE YW
ELMASRY NA
COOK JW
SCHETZINA JF
REN J
EDMOND JA
Citation: Mal. Johnson et al., MOLECULAR-BEAM EPITAXY GROWTH AND PROPERTIES OF GAN, ALXGA1-XN, AND ALN ON GAN SIC SUBSTRATES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 2349-2353
Authors:
JOHNSON MAL
FUJITA S
ROWLAND WH
HUGHES WC
HE YW
ELMASRY NA
COOK JW
SCHETZINA JF
REN J
EDMOND JA
Citation: Mal. Johnson et al., MBE GROWTH AND PROPERTIES OF GAN AND ALXGA1-XN ON GAN SIC SUBSTRATES/, Journal of electronic materials, 25(5), 1996, pp. 793-797
Authors:
JOHNSON MAL
FUJITA S
ROWLAND WH
HUGHES WC
COOK JW
SCHETZINA JF
Citation: Mal. Johnson et al., MBE GROWTH AND PROPERTIES OF ZNO ON SAPPHIRE AND SIC SUBSTRATES, Journal of electronic materials, 25(5), 1996, pp. 855-862
Authors:
HUGHES WC
ROWLAND WH
JOHNSON MAL
FUJITA S
COOK JW
SCHETZINA JF
REN J
EDMOND JA
Citation: Wc. Hughes et al., MOLECULAR-BEAM EPITAXY GROWTH AND PROPERTIES OF GAN FILMS ON GAN SIC SUBSTRATES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(4), 1995, pp. 1571-1577
Citation: Mal. Johnson et al., MOLECULAR-BEAM EPITAXY GROWTH OF II-VI LIGHT-EMITTING DEVICES ON GAASSUBSTRATES USING VALVED SOURCES FOR S AND SE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(2), 1995, pp. 746-749