Authors:
SCHAEPKENS M
OEHRLEIN GS
HEDLUND C
JONSSON LB
BLOM HO
Citation: M. Schaepkens et al., SELECTIVE SIO2-TO-SI3N4 ETCHING IN INDUCTIVELY-COUPLED FLUOROCARBON PLASMAS - ANGULAR-DEPENDENCE OF SIO2 AND SI3N4 ETCHING RATES, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(6), 1998, pp. 3281-3286
Authors:
SHAMRAI KP
VIRKO VF
BLOM HO
PAVLENKO VP
TARANOV VB
JONSSON LB
HEDLUND C
BERG S
Citation: Kp. Shamrai et al., DISCHARGE DISRUPTIONS IN A HELICON PLASMA SOURCE, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(6), 1997, pp. 2864-2874
Authors:
HEDLUND C
JONSSON LB
KATARDJIEV IV
BERG S
BLOM HO
Citation: C. Hedlund et al., ANGULAR-DEPENDENCE OF THE POLYSILICON ETCH RATE DURING DRY-ETCHING INSF6 AND CL-2, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(3), 1997, pp. 686-691