Authors: BEISSWANGER FJ JORKE H

Citation: Fj. Beisswanger et H. Jorke, ELECTRON-TRANSPORT IN BIPOLAR-TRANSISTORS WITH BIAXIALLY STRAINED BASE LAYERS, I.E.E.E. transactions on electron devices, 43(1), 1996, pp. 62-69

Authors: BEISSWANGER F JORKE H KIBBEL H HERZOG HJ SCHUPPEN A SAUER R

Citation: F. Beisswanger et al., ASSESSMENT OF INTERVALLEY F-SCATTERING TIME CONSTANTS IN SI SIGE HETEROSTRUCTURES/, Journal of crystal growth, 157(1-4), 1995, pp. 222-226

Authors: STROHM KM LUY JF SCHAFFLER F JORKE H KIBBEL H RHEINFELDER C DOERNER R GERDES J SCHMUCKLE FJ HEINRICH W

Citation: Km. Strohm et al., COPLANAR KA-BAND SIGE-MMIC AMPLIFIER, Electronics Letters, 31(16), 1995, pp. 1353-1354

Authors: JORKE H

Citation: H. Jorke, TRANSPORT CHARACTERISTICS OF A SYMMETRICALLY EXTENDED BIPOLAR-TRANSISTOR, I.E.E.E. transactions on electron devices, 41(10), 1994, pp. 1691-1697

Authors: JORKE H

Citation: H. Jorke, INJECTION CURRENT IN A PLANAR-DOPED BASE SI BIPOLAR JUNCTION TRANSISTOR, Solid-state electronics, 36(7), 1993, pp. 975-979

Authors: JORKE H KIBBEL H STROHM K KASPER E

Citation: H. Jorke et al., FORWARD-BIAS CHARACTERISTICS OF SI BIPOLAR JUNCTIONS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURES, Applied physics letters, 63(17), 1993, pp. 2408-2410