Authors: IWAI T OHARA S YAMADA H YAMAGUCHI Y IMANISHI K JOSHIN K

Citation: T. Iwai et al., HIGH-EFFICIENCY AND HIGH LINEARITY INGAP GAAS HBT POWER-AMPLIFIERS - MATCHING TECHNIQUES OF SOURCE AND LOAD IMPEDANCE TO IMPROVE PHASE-DISTORTION AND LINEARITY/, I.E.E.E. transactions on electron devices, 45(6), 1998, pp. 1196-1200

Authors: IWAI T SHIGEMATSU H YAMADA H TOMIOKA T JOSHIN K FUJII T

Citation: T. Iwai et al., 1.5V LOW-VOLTAGE MICROWAVE-POWER PERFORMANCE OF INALAS INGAAS DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS/, JPN J A P 1, 36(2), 1997, pp. 648-651

Authors: ISHIKAWA Y URABE S KANMURI N SAGAWA M JOSHIN K HIKITA M HONJO K MURAGUCHI M MIYAZAKI M WATANABE S

Citation: Y. Ishikawa et al., SPECIAL ISSUE ON MICROWAVE DEVICES FOR MOBILE COMMUNICATIONS, IEICE transactions on electronics, E79C(5), 1996, pp. 599-599

Authors: YAMADA H OHARA S IWAI T YAMAGUCHI Y IMANISHI K JOSHIN K

Citation: H. Yamada et al., SELF-LINEARIZING TECHNIQUE FOR L-BAND HBT POWER-AMPLIFIER - EFFECT OFSOURCE IMPEDANCE ON PHASE-DISTORTION, IEEE transactions on microwave theory and techniques, 44(12), 1996, pp. 2398-2402

Authors: BOVE P ONO K JOSHIN K TANAKA H KASAI K KOMENO J

Citation: P. Bove et al., CHEMICAL BEAM EPITAXY SELECTIVELY-REGROWN N-GAAS LAYER ON METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWN GAINP()GAINAS/GAAS PSEUDOMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTOR STRUCTURE/, Journal of crystal growth, 136(1-4), 1994, pp. 261-267

Authors: TAKIKAWA M JOSHIN K

Citation: M. Takikawa et K. Joshin, PSEUDOMORPHIC N-INGAP INGAAS/GAAS HIGH-ELECTRON-MOBILITY TRANSISTORS FOR LOW-NOISE AMPLIFIERS/, IEEE electron device letters, 14(8), 1993, pp. 406-408