Authors: JOSIEK A LANGLAIS F BOURRAT X

Citation: A. Josiek et al., A STUDY OF THE TRANSITION BETWEEN GROWTH OF STOICHIOMETRIC AND SILICON-EXCESS SILICON-CARBIDE BY CVD IN THE SYSTEM MTS H-2/, CHEMICAL VAPOR DEPOSITION, 2(1), 1996, pp. 17-21

Authors: JOSIEK A LANGLAIS F

Citation: A. Josiek et F. Langlais, RESIDENCE-TIME DEPENDENT KINETICS OF CVD GROWTH OF SIC IN THE MTS H-2SYSTEM/, Journal of crystal growth, 160(3-4), 1996, pp. 253-260

Authors: JOSIEK A

Citation: A. Josiek, NONSTOICHIOMETRY AND NANOCRYSTALLIZATION OF SILICON-RICH SILICON-CARBIDE DEPOSITED BY CHEMICAL-VAPOR-DEPOSITION, Journal of crystal growth, 160(3-4), 1996, pp. 261-267

Authors: TELES LK SCOLFARO LMR ENDERLEIN R LEITE JR JOSIEK A SCHIKORA D LISCHKA K

Citation: Lk. Teles et al., STRUCTURAL-PROPERTIES OF CUBIC GAN EPITAXIAL LAYERS GROWN ON BETA-SIC, Journal of applied physics, 80(11), 1996, pp. 6322-6328