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Results: 1-11 |
Results: 11
Er/O doped Si1-xGex alloy layers grown by MBE
Authors: Duteil, F Du, CX Jarrendahl, K Ni, WX Hansson, GV
Citation: F. Duteil et al., Er/O doped Si1-xGex alloy layers grown by MBE, OPT MATER, 17(1-2), 2001, pp. 131-134
Electronic structure of ScN determined using optical spectroscopy, photoemission, and ab initio calculations - art. no. 125119
Authors: Gall, D Stadele, M Jarrendahl, K Petrov, I Desjardins, P Haasch, RT Lee, TY Greene, JE
Citation: D. Gall et al., Electronic structure of ScN determined using optical spectroscopy, photoemission, and ab initio calculations - art. no. 125119, PHYS REV B, 6312(12), 2001, pp. 5119
Electrical and optical properties of sputter deposited tin doped indium oxide thin films with silver additive
Authors: Hultaker, A Jarrendahl, K Lu, J Granqvist, CG Niklasson, GA
Citation: A. Hultaker et al., Electrical and optical properties of sputter deposited tin doped indium oxide thin films with silver additive, THIN SOL FI, 392(2), 2001, pp. 305-310
Electrical and optical properties of CNx(0 <= x <= 0.25) films deposited by reactive magnetron sputtering
Authors: Broitman, E Hellgren, N Jarrendahl, K Johansson, MP Olafsson, S Radnoczi, G Sundgren, JE Hultman, L
Citation: E. Broitman et al., Electrical and optical properties of CNx(0 <= x <= 0.25) films deposited by reactive magnetron sputtering, J APPL PHYS, 89(2), 2001, pp. 1184-1190
Ordinary and extraordinary dielectric functions of 4H-and 6H-SiC from 3.5 to 9.0 eV
Authors: Lindquist, OPA Jarrendahl, K Peters, S Zettler, JT Cobet, C Esser, N Aspnes, DE Henry, A Edwards, NV
Citation: Opa. Lindquist et al., Ordinary and extraordinary dielectric functions of 4H-and 6H-SiC from 3.5 to 9.0 eV, APPL PHYS L, 78(18), 2001, pp. 2715-2717
Characterization of 3C-SiC by spectroscopic ellipsometry
Authors: Jansson, R Zangooie, S Arwin, H Jarrendahl, K
Citation: R. Jansson et al., Characterization of 3C-SiC by spectroscopic ellipsometry, PHYS ST S-B, 218(1), 2000, pp. R1-R2
Real-time assessment of selected surface preparation regimens for 4H-SiC surfaces using spectroscopic ellipsometry
Authors: Edwards, NV Jarrendahl, K Aspnes, DE Robbie, K Powell, GD Cobet, C Esser, N Richter, W Madsen, LD
Citation: Nv. Edwards et al., Real-time assessment of selected surface preparation regimens for 4H-SiC surfaces using spectroscopic ellipsometry, SURF SCI, 464(1), 2000, pp. L703-L707
Optical characterization of industrially sputtered nickel-nickel oxide solar selective surface
Authors: Adsten, M Joerger, R Jarrendahl, K Wackelgard, E
Citation: M. Adsten et al., Optical characterization of industrially sputtered nickel-nickel oxide solar selective surface, SOLAR ENERG, 68(4), 2000, pp. 325-328
Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery
Authors: Ronning, C Dalmer, M Uhrmacher, M Restle, M Vetter, U Ziegeler, L Hofsass, H Gehrke, T Jarrendahl, K Davis, RF
Citation: C. Ronning et al., Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery, J APPL PHYS, 87(5), 2000, pp. 2149-2157
Enhanced quality of epitaxial AlN thin films on 6H-SiC by ultra-high-vacuum ion-assisted reactive dc magnetron sputter deposition
Authors: Tungasmita, S Birch, J Persson, POA Jarrendahl, K Hultman, L
Citation: S. Tungasmita et al., Enhanced quality of epitaxial AlN thin films on 6H-SiC by ultra-high-vacuum ion-assisted reactive dc magnetron sputter deposition, APPL PHYS L, 76(2), 2000, pp. 170-172
Materials properties and characterization of SiC
Authors: Jarrendahl, K Davis, RF
Citation: K. Jarrendahl et Rf. Davis, Materials properties and characterization of SiC, SEM SEMIMET, 52, 1998, pp. 1-20
Risultati: 1-11 |