Authors: Lim, HS Kang, SB Jeon, IS Choi, GH Park, YW Lee, SI Moon, JT

Citation: Hs. Lim et al., Atomic layer deposition- and chemical vapor deposition-TiN top electrode optimization for the reliability of Ta2O5 and Al2O3 metal insulator silicon capacitor for 0.13 mu m technology and beyond, JPN J A P 1, 40(4B), 2001, pp. 2669-2673