Authors: Lee, JW Jeon, MH Devre, M Mackenzie, KD Johnson, D Sasserath, JN Pearton, SJ Ren, F Shul, RJ

Citation: Jw. Lee et al., Understanding of etch mechanism and etch depth distribution in inductivelycoupled plasma etching of GaAs, SOL ST ELEC, 45(9), 2001, pp. 1683-1686

Authors: Lee, JW Jeon, MH Cho, GS Yim, HC Chang, SK Kim, KK Devre, M Lee, YS Westerman, R Johnson, D Sasserath, JN Pearton, SJ

Citation: Jw. Lee et al., Utilization of optical emission spectroscopy for end-point detection during AlGaAs/GaAs and InGaP/GaAs etching in BCl3/N-2 inductively coupled plasmas, J ELCHEM SO, 148(9), 2001, pp. G472-G474