Authors: Johnson, MAL Yu, ZH Brown, JD El-Masry, NA Cook, JW Schetzina, JF

Citation: Mal. Johnson et al., Scanning electron microscopy and cathodoluminescence study of the epitaxial lateral overgrowth (ELO) process for gallium nitride, J ELEC MAT, 28(3), 1999, pp. 295-300

Authors: Young, AP Schafer, J Brillson, LJ Yang, Y Xu, SH Cruguel, H Lapeyre, GJ Johnson, MAL Schetzina, JF

Citation: Ap. Young et al., Electronic near-surface defect states of bare and metal covered n-GaN films observed by cathodoluminescence spectroscopy, J ELEC MAT, 28(3), 1999, pp. 308-313

Authors: Guha, S Bojarczuk, NA Johnson, MAL Schetzina, JF

Citation: S. Guha et al., Selective area metalorganic molecular-beam epitaxy of GaN and the growth of luminescent microcolumns on Si/SiO2, APPL PHYS L, 75(4), 1999, pp. 463-465

Authors: Yu, ZH Johnson, MAL Brown, JD El-Masry, NA Cook, JW Schetzina, JF

Citation: Zh. Yu et al., Study of the epitaxial-lateral-overgrowth (ELO) process for GaN on sapphire, J CRYST GR, 195(1-4), 1998, pp. 333-339