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Results:
1-7
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Results: 7
Authors:
Niu, GF
Juraver, JB
Borgarino, M
Jin, ZR
Cressler, JD
Plana, R
Llopis, O
Mathew, S
Zhang, SM
Clark, S
Joseph, AJ
Citation: Gf. Niu et al., Impact of gamma irradiation on the RF phase noise capability of UHV/CVD SiGeHBTs, SOL ST ELEC, 45(1), 2001, pp. 107-112
Authors:
Harame, DL
Ahlgren, DC
Coolbaugh, DD
Dunn, JS
Freeman, GG
Gillis, JD
Groves, RA
Hendersen, GN
Johnson, RA
Joseph, AJ
Subbanna, S
Victor, AM
Watson, KM
Webster, CS
Zampardi, PJ
Citation: Dl. Harame et al., Current status and future trends of SiGeBiCMOS technology, IEEE DEVICE, 48(11), 2001, pp. 2575-2594
Authors:
Niu, GF
Jin, ZR
Cressler, JD
Rapeta, R
Joseph, AJ
Harame, D
Citation: Gf. Niu et al., Transistor noise in SiGeHBT RF technology, IEEE J SOLI, 36(9), 2001, pp. 1424-1427
Authors:
Cressler, JD
Hamilton, MC
Mullinax, GS
Li, Y
Niu, GF
Marshall, CJ
Marshall, PW
Kim, HS
Palmer, MJ
Joseph, AJ
Freeman, G
Citation: Jd. Cressler et al., The effects of proton irradiation on the lateral and vertical scaling of UHV/CVD SiGeHBT BiCMOS technology, IEEE NUCL S, 47(6), 2000, pp. 2515-2520
Authors:
Niu, GF
Zhang, SM
Cressler, JD
Joseph, AJ
Fairbanks, JS
Larson, LE
Webster, CS
Ansley, WE
Harame, DL
Citation: Gf. Niu et al., Noise modeling and SiGe profile design tradeoffs for RF applications, IEEE DEVICE, 47(11), 2000, pp. 2037-2044
Authors:
Joseph, AJ
Cressler, JD
Richey, DM
Niu, GF
Citation: Aj. Joseph et al., Optimization of SiGeHBT's for operation at high current densities, IEEE DEVICE, 46(7), 1999, pp. 1347-1354
Authors:
Niu, GF
Cressler, JD
Gogineni, U
Joseph, AJ
Citation: Gf. Niu et al., A new common-emitter hybrid-pi small-signal equivalent circuit for bipolartransistors with significant neutral base recombination, IEEE DEVICE, 46(6), 1999, pp. 1166-1173
Risultati:
1-7
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