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SURFACE-REACTION PROBABILITIES AND KINETICS OF H, SIH3, SI2H5, CH3, AND C2H5 DURING DEPOSITION OF A-SI-H AND A-C-H FROM H-2, SIH4, AND CH2 DISCHARGES
Authors: PERRIN J SHIRATANI M KAENUNE P VIDELOT H JOLLY J GUILLON J
Citation: J. Perrin et al., SURFACE-REACTION PROBABILITIES AND KINETICS OF H, SIH3, SI2H5, CH3, AND C2H5 DURING DEPOSITION OF A-SI-H AND A-C-H FROM H-2, SIH4, AND CH2 DISCHARGES, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(1), 1998, pp. 278-289
SURFACE RECOMBINATION PROBABILITIES OF H ON STAINLESS-STEEL, A-SI-H AND OXIDIZED SILICON DETERMINED BY THRESHOLD IONIZATION MASS-SPECTROMETRY IN H-2 RF DISCHARGES
Authors: KAENUNE P PERRIN J JOLLY J GUILLON J
Citation: P. Kaenune et al., SURFACE RECOMBINATION PROBABILITIES OF H ON STAINLESS-STEEL, A-SI-H AND OXIDIZED SILICON DETERMINED BY THRESHOLD IONIZATION MASS-SPECTROMETRY IN H-2 RF DISCHARGES, Surface science, 360(1-3), 1996, pp. 495-498
MASS-SPECTROMETRY DETECTION OF RADICALS IN SIH4-CH4-H-2 GLOW-DISCHARGE PLASMAS
Authors: KAENUNE P PERRIN J GUILLON J JOLLY J
Citation: P. Kaenune et al., MASS-SPECTROMETRY DETECTION OF RADICALS IN SIH4-CH4-H-2 GLOW-DISCHARGE PLASMAS, Plasma sources science & technology, 4(2), 1995, pp. 250-259
MASS-SPECTROMETRY DETECTION OF SIHM AND CHM RADICALS FROM SIH4-CH4-H-2 RF DISCHARGES UNDER HIGH-TEMPERATURE DEPOSITION CONDITIONS OF SILICON-CARBIDE
Authors: KAENUNE P PERRIN J GUILLON J JOLLY J
Citation: P. Kaenune et al., MASS-SPECTROMETRY DETECTION OF SIHM AND CHM RADICALS FROM SIH4-CH4-H-2 RF DISCHARGES UNDER HIGH-TEMPERATURE DEPOSITION CONDITIONS OF SILICON-CARBIDE, JPN J A P 1, 33(7B), 1994, pp. 4303-4307
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