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Results: 1-12 |
Results: 12
IN-SITU BALLISTIC-CARRIER SPECTROSCOPY ON EPITAXIAL COSI2 SI(111) ANDSI(100)/
Authors: SIRRINGHAUS H LEE EY KAFADER U VONKANEL H
Citation: H. Sirringhaus et al., IN-SITU BALLISTIC-CARRIER SPECTROSCOPY ON EPITAXIAL COSI2 SI(111) ANDSI(100)/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(4), 1995, pp. 1848-1852
IN-SITU DC-PLASMA CLEANING OF SILICON SURFACES
Authors: KAFADER U SIRRINGHAUS H VONKANEL H
Citation: U. Kafader et al., IN-SITU DC-PLASMA CLEANING OF SILICON SURFACES, Applied surface science, 90(3), 1995, pp. 297-302
BALLISTIC-ELECTRON-EMISSION-MICROSCOPY INVESTIGATION OF HOT-CARRIER TRANSPORT IN EPITAXIAL COSI2 FILMS ON SI(100) AND SI(111)
Authors: LEE EY SIRRINGHAUS H KAFADER U VONKANEL H
Citation: Ey. Lee et al., BALLISTIC-ELECTRON-EMISSION-MICROSCOPY INVESTIGATION OF HOT-CARRIER TRANSPORT IN EPITAXIAL COSI2 FILMS ON SI(100) AND SI(111), Physical review. B, Condensed matter, 52(3), 1995, pp. 1816-1829
HIGH-RESOLUTION X-RAY-PHOTOEMISSION STUDY OF METASTABLE FE SILICIDE CORE-ELECTRON STATES
Authors: HONG S KAFADER U WETZEL P GEWINNER G PIRRI C
Citation: S. Hong et al., HIGH-RESOLUTION X-RAY-PHOTOEMISSION STUDY OF METASTABLE FE SILICIDE CORE-ELECTRON STATES, Physical review. B, Condensed matter, 51(24), 1995, pp. 17667-17674
EPITAXIAL METAL SILICIDES - INTERFACE MAPPING BY SCANNING PROBE TECHNIQUES
Authors: VONKANEL H LEE EY SIRRINGHAUS H KAFADER U
Citation: H. Vonkanel et al., EPITAXIAL METAL SILICIDES - INTERFACE MAPPING BY SCANNING PROBE TECHNIQUES, Thin solid films, 267(1-2), 1995, pp. 89-94
THIN-FILM PHOTODETECTORS GROWN EPITAXIALLY ON SILICON
Authors: SUTTER P KAFADER U VONKANEL H
Citation: P. Sutter et al., THIN-FILM PHOTODETECTORS GROWN EPITAXIALLY ON SILICON, Solar energy materials and solar cells, 31(4), 1994, pp. 541-547
X-RAY PHOTOELECTRON DIFFRACTION FROM SI(111) - SHORT VERSUS LONGER RANGE STRUCTURAL SENSITIVITY
Authors: GEWINNER G KAFADER U WETZEL P PIRRI C
Citation: G. Gewinner et al., X-RAY PHOTOELECTRON DIFFRACTION FROM SI(111) - SHORT VERSUS LONGER RANGE STRUCTURAL SENSITIVITY, Journal of electron spectroscopy and related phenomena, 67(3), 1994, pp. 387-399
HIGH-ANGULAR RESOLUTION X-RAY PHOTOELECTRON DIFFRACTION MEASUREMENTS OF SI(111)
Authors: PIRRI C KAFADER U GEWINNER G WETZEL P
Citation: C. Pirri et al., HIGH-ANGULAR RESOLUTION X-RAY PHOTOELECTRON DIFFRACTION MEASUREMENTS OF SI(111), Solid state communications, 89(4), 1994, pp. 313-317
IN-SITU DC-HYDROGEN PLASMA CLEANING OF SI(111) SURFACES
Authors: KAFADER U SIRRINGHAUS H RAMM J DOMMANN A VONKANEL H
Citation: U. Kafader et al., IN-SITU DC-HYDROGEN PLASMA CLEANING OF SI(111) SURFACES, Helvetica Physica Acta, 67(2), 1994, pp. 211-212
FORMATION OF EPITAXIAL CSCL-TYPE IRON SILICIDE ON SI(111)
Authors: KAFADER U TUILIER MH PIRRI C WETZEL P GEWINNER G BOLMONT D HECKMANN O CHANDESRIS D MAGNAN H
Citation: U. Kafader et al., FORMATION OF EPITAXIAL CSCL-TYPE IRON SILICIDE ON SI(111), Europhysics letters, 22(7), 1993, pp. 529-535
SI-RICH P(2X2) SURFACE RECONSTRUCTION OF EPITAXIAL FLUORITE-TYPE IRONSILICIDE LAYERS ON SI(111)
Authors: KAFADER U WETZEL P PIRRI C GEWINNER G
Citation: U. Kafader et al., SI-RICH P(2X2) SURFACE RECONSTRUCTION OF EPITAXIAL FLUORITE-TYPE IRONSILICIDE LAYERS ON SI(111), Applied surface science, 70-1, 1993, pp. 573-577
X-RAY PHOTOEMISSION CHARACTERIZATION OF THIN EPITAXIAL FE SILICIDE PHASES ON SI(111)
Authors: KAFADER U WETZEL P PIRRI C GEWINNER G
Citation: U. Kafader et al., X-RAY PHOTOEMISSION CHARACTERIZATION OF THIN EPITAXIAL FE SILICIDE PHASES ON SI(111), Applied physics letters, 63(17), 1993, pp. 2360-2362
Risultati: 1-12 |