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Results: 1-25 | 26-49
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MULTIPURPOSE NANOBEAM SOURCE WITH SUPERTIP EMITTER
Authors: KALBITZER S KNOBLAUCH A
Citation: S. Kalbitzer et A. Knoblauch, MULTIPURPOSE NANOBEAM SOURCE WITH SUPERTIP EMITTER, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 2455-2461
ELECTRON AND ION EMISSION PROPERTIES OF IRIDIUM SUPERTIP FIELD EMITTERS
Authors: KNOBLAUCH A MILLER T KLATT C KALBITZER S
Citation: A. Knoblauch et al., ELECTRON AND ION EMISSION PROPERTIES OF IRIDIUM SUPERTIP FIELD EMITTERS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 139(1-4), 1998, pp. 20-27
ANGULAR DEPENDENT ENERGY-LOSS OF 0.8-2.0 MEV HE IONS CHANNELED ALONG THE SI[100] DIRECTION
Authors: AZEVEDO GD BEHAR M DIAS JF GRANDE PL DOSSANTOS JHR STOLL R KLATT C KALBITZER S
Citation: Gd. Azevedo et al., ANGULAR DEPENDENT ENERGY-LOSS OF 0.8-2.0 MEV HE IONS CHANNELED ALONG THE SI[100] DIRECTION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 138, 1998, pp. 132-136
RANGE PARAMETERS OF GOLD AND LEAD IN CARBON AND CARBON IN GOLD AT REDUCED ENERGIES OF 10(-3)LESS-THAN-EPSILON-LESS-THAN-1
Authors: FRIEDLAND E KALBITZER S HAYES M KLATT C KONAC G LANGPAPE C
Citation: E. Friedland et al., RANGE PARAMETERS OF GOLD AND LEAD IN CARBON AND CARBON IN GOLD AT REDUCED ENERGIES OF 10(-3)LESS-THAN-EPSILON-LESS-THAN-1, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 138, 1998, pp. 147-152
LOW-ENERGY ION BACKSCATTERING SPECTROMETRY OF MULTILAYER TARGETS
Authors: KLATT C KALBITZER S KONAC G
Citation: C. Klatt et al., LOW-ENERGY ION BACKSCATTERING SPECTROMETRY OF MULTILAYER TARGETS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 138, 1998, pp. 153-158
ENERGY-LOSS AND STRAGGLING OF H AND HE IONS OF KEV ENERGIES IN SI ANDC
Authors: KONAC G KALBITZER S KLATT C NIEMANN D STOLL R
Citation: G. Konac et al., ENERGY-LOSS AND STRAGGLING OF H AND HE IONS OF KEV ENERGIES IN SI ANDC, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 138, 1998, pp. 159-165
OPTICAL EFFECTS IN CARBON-ION IRRADIATED DIAMOND
Authors: BHATIA KL FABIAN S KALBITZER S KLATT C KRATSCHMER W STOLL R SELLSCHOP JFP
Citation: Kl. Bhatia et al., OPTICAL EFFECTS IN CARBON-ION IRRADIATED DIAMOND, Thin solid films, 324(1-2), 1998, pp. 11-18
HIGH-BRIGHTNESS SOURCE FOR ION AND ELECTRON-BEAMS (INVITED)
Authors: KALBITZER S KNOBLAUCH A
Citation: S. Kalbitzer et A. Knoblauch, HIGH-BRIGHTNESS SOURCE FOR ION AND ELECTRON-BEAMS (INVITED), Review of scientific instruments, 69(2), 1998, pp. 1026-1031
THE LOCAL ORDER OF AS SITES IN INCREASINGLY AMORPHOUS SI
Authors: DENT AJ DERST G GREAVES GN KALBITZER S KLATT C
Citation: Aj. Dent et al., THE LOCAL ORDER OF AS SITES IN INCREASINGLY AMORPHOUS SI, Journal de physique. IV, 7(C2), 1997, pp. 1207-1208
OBSERVATION OF H-1 TUNNELING DIFFUSION IN CRYSTALLINE SI
Authors: LANGPAPE C FABIAN S KLATT C KALBITZER S
Citation: C. Langpape et al., OBSERVATION OF H-1 TUNNELING DIFFUSION IN CRYSTALLINE SI, Applied physics A: Materials science & processing, 64(2), 1997, pp. 207-210
ELECTRONIC STOPPING POWER OF B-10 CHANNELED INTO THE SI[100] AXIAL DIRECTION
Authors: DOSSANTOS JHR GRANDE PL BOUDINOV H BEHAR M STOLL R KLATT C KALBITZER S
Citation: Jhr. Dossantos et al., ELECTRONIC STOPPING POWER OF B-10 CHANNELED INTO THE SI[100] AXIAL DIRECTION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 107-111
POST BOMBARDMENT ENHANCED OPTICAL-ABSORPTION IN GOLD IMPLANTED SILICA
Authors: ILA D WU Z SMITH CC POKER DB HENSLEY DK KLATT C KALBITZER S
Citation: D. Ila et al., POST BOMBARDMENT ENHANCED OPTICAL-ABSORPTION IN GOLD IMPLANTED SILICA, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 570-573
ENERGY SPREAD OF ION-BEAMS PASSING A GAS STRIPPER
Authors: HARTMANN B KALBITZER S KLATT C
Citation: B. Hartmann et al., ENERGY SPREAD OF ION-BEAMS PASSING A GAS STRIPPER, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 124(4), 1997, pp. 490-499
STOPPING POWER MEASUREMENTS OF H-1, HE-4 AND N-14 IN SI IN THE ENERGY-RANGE OF 0.02-1 MEV AMU (VOL 118, PG 11, 1996)/
Authors: NIEMANN D KONAC G KALBITZER S
Citation: D. Niemann et al., STOPPING POWER MEASUREMENTS OF H-1, HE-4 AND N-14 IN SI IN THE ENERGY-RANGE OF 0.02-1 MEV AMU (VOL 118, PG 11, 1996)/, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 124(4), 1997, pp. 646-646
ELECTRONIC STOPPING POWER OF B-10 IN SI IN RANDOM AND [100]CHANNELINGDIRECTIONS
Authors: DOSSANTOS JHR BEHAR M GRANDE PL BOUDINOV H STOLL R KLATT C KALBITZER S
Citation: Jhr. Dossantos et al., ELECTRONIC STOPPING POWER OF B-10 IN SI IN RANDOM AND [100]CHANNELINGDIRECTIONS, Physical review. B, Condensed matter, 55(20), 1997, pp. 13651-13657
STUDYING THE ENVIRONMENTS OF ION-IMPLANTED ARSENIC DEFECTS IN AMORPHOUS AND RECRYSTALLIZED SILICON WITH IMPURITY EXAFS
Authors: GREAVES GN DENT AJ DERST G KALBITZER S MULLER G
Citation: Gn. Greaves et al., STUDYING THE ENVIRONMENTS OF ION-IMPLANTED ARSENIC DEFECTS IN AMORPHOUS AND RECRYSTALLIZED SILICON WITH IMPURITY EXAFS, Berichte der Bunsengesellschaft fur Physikalische Chemie, 101(9), 1997, pp. 1258-1264
DOPANT DEFECT INTERACTIONS IN HYDROGEN-FREE AMORPHOUS-SILICON
Authors: MULLER G HELLMICH W KROTZ G KALBITZER S GREAVES GN DERST G DENT AJ DOBSON BR
Citation: G. Muller et al., DOPANT DEFECT INTERACTIONS IN HYDROGEN-FREE AMORPHOUS-SILICON, Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic, 73(2), 1996, pp. 245-259
STOPPING POWER MEASUREMENTS OF H-1, HE-4 AND N-14 IN SI IN THE ENERGY-RANGE OF 0.02-1 MEV AMU/
Authors: NIEMANN D KONAC G KALBITZER S
Citation: D. Niemann et al., STOPPING POWER MEASUREMENTS OF H-1, HE-4 AND N-14 IN SI IN THE ENERGY-RANGE OF 0.02-1 MEV AMU/, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 118(1-4), 1996, pp. 11-18
STUDY OF IMPLANTATION DAMAGE RANGES IN METALS AT TEMPERATURES RANGINGFROM 5 TO 300 K
Authors: FRIEDLAND E VANDERBERG NG MEYER O KALBITZER S
Citation: E. Friedland et al., STUDY OF IMPLANTATION DAMAGE RANGES IN METALS AT TEMPERATURES RANGINGFROM 5 TO 300 K, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 118(1-4), 1996, pp. 29-33
RUTHERFORD BACKSCATTERING SPECTROMETRY FOR THE ANALYSIS OF ATMOSPHERIC AEROSOLS
Authors: KOVAC P DOBROVODSKY J KALBITZER S KLATT C
Citation: P. Kovac et al., RUTHERFORD BACKSCATTERING SPECTROMETRY FOR THE ANALYSIS OF ATMOSPHERIC AEROSOLS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 118(1-4), 1996, pp. 162-166
ENERGY WIDTHS OF ION-BEAMS FROM A TANDEM ACCELERATOR
Authors: HARTMANN B KALBITZER S KLATT C
Citation: B. Hartmann et al., ENERGY WIDTHS OF ION-BEAMS FROM A TANDEM ACCELERATOR, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 113(1-4), 1996, pp. 50-53
ION-BEAM MODIFICATION FOR SUBMICRON TECHNOLOGY
Authors: KALBITZER S WILBERTZ C MILLER T KNOBLAUCH A
Citation: S. Kalbitzer et al., ION-BEAM MODIFICATION FOR SUBMICRON TECHNOLOGY, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 113(1-4), 1996, pp. 154-160
FIELD ELECTRON-EMISSION PROPERTIES OF A SUPERTIP
Authors: KNOBLAUCH A WILBERTZ C MILLER T KALBITZER S
Citation: A. Knoblauch et al., FIELD ELECTRON-EMISSION PROPERTIES OF A SUPERTIP, Journal of physics. D, Applied physics, 29(2), 1996, pp. 470-473
ION-IMPLANTATION DOPING OF CRYSTALLINE 6H-SIC
Authors: SONNTAG H KALBITZER S
Citation: H. Sonntag et S. Kalbitzer, ION-IMPLANTATION DOPING OF CRYSTALLINE 6H-SIC, Applied physics A: Materials science & processing, 61(4), 1995, pp. 363-367
OPTICAL-ABSORPTION AND ELECTRONIC TRANSPORT IN ION-IMPLANTATION-DOPEDPOLYCRYSTALLINE SIC FILMS
Authors: HELLMICH W MULLER G KROTZ G DERST G KALBITZER S
Citation: W. Hellmich et al., OPTICAL-ABSORPTION AND ELECTRONIC TRANSPORT IN ION-IMPLANTATION-DOPEDPOLYCRYSTALLINE SIC FILMS, Applied physics A: Materials science & processing, 61(2), 1995, pp. 193-201
Risultati: 1-25 | 26-49