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Results: 1-25 | 26-49 |
Results: 26-49/49
FIELD-ION IMAGING OF A TUNGSTEN SUPERTIP
Authors: MILLER T KNOBLAUCH A WILBERTZ C KALBITZER S
Citation: T. Miller et al., FIELD-ION IMAGING OF A TUNGSTEN SUPERTIP, Applied physics A: Materials science & processing, 61(1), 1995, pp. 99-100
ELECTRONIC TRANSPORT IN THERMALLY CRYSTALLIZED SIC FILMS ON SAPPHIRE
Authors: HELLMICH W MULLER G KROTZ G DERST G KALBITZER S
Citation: W. Hellmich et al., ELECTRONIC TRANSPORT IN THERMALLY CRYSTALLIZED SIC FILMS ON SAPPHIRE, Materials science & engineering. B, Solid-state materials for advanced technology, 29(1-3), 1995, pp. 147-150
TRACING THE CHANGING ENVIRONMENT OF LATTICE SITES IN THE RECRYSTALLIZATION OF AMORPHISED SILICON
Authors: DENT AJ GREAVES GN DERST G KALBITZER S MULLER G
Citation: Aj. Dent et al., TRACING THE CHANGING ENVIRONMENT OF LATTICE SITES IN THE RECRYSTALLIZATION OF AMORPHISED SILICON, Physica. B, Condensed matter, 209(1-4), 1995, pp. 503-505
THE ENVIRONMENT OF LATTICE SITES DURING THERMAL EPITAXIAL REGROWTH OFION-BEAM AMORPHIZED SILICON
Authors: KALBITZER S GREAVES GN DENT AJ DERST G MULLER G
Citation: S. Kalbitzer et al., THE ENVIRONMENT OF LATTICE SITES DURING THERMAL EPITAXIAL REGROWTH OFION-BEAM AMORPHIZED SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 97(1-4), 1995, pp. 312-315
ELECTRONIC STOPPING POWER OF (100)-AXIAL-CHANNELED HE IONS IN SI CRYSTALS
Authors: DOSSANTOS JHR GRANDE PL BOUDINOV H BEHAR M STOLL R KLATT C KALBITZER S
Citation: Jhr. Dossantos et al., ELECTRONIC STOPPING POWER OF (100)-AXIAL-CHANNELED HE IONS IN SI CRYSTALS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 106(1-4), 1995, pp. 51-54
N-15 NUCLEAR-REACTION ANALYSIS OF H-1 ON [111]SI SURFACES
Authors: HARTMANN B KALBITZER S BEHAR M
Citation: B. Hartmann et al., N-15 NUCLEAR-REACTION ANALYSIS OF H-1 ON [111]SI SURFACES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 103(4), 1995, pp. 494-501
EFFECT OF ION-BEAM-INDUCED DISORDER ON OPTICAL INTERBAND-TRANSITIONS IN SI AND GAAS
Authors: BHATIA KL WILBERTZ C DERST G KALBITZER S
Citation: Kl. Bhatia et al., EFFECT OF ION-BEAM-INDUCED DISORDER ON OPTICAL INTERBAND-TRANSITIONS IN SI AND GAAS, Radiation effects and defects in solids, 128(4), 1994, pp. 341-355
REVERSIBLE AND IRREVERSIBLE STRUCTURAL-CHANGES IN AMORPHOUS-SILICON
Authors: MULLER G KROTZ G KALBITZER S GREAVES GN
Citation: G. Muller et al., REVERSIBLE AND IRREVERSIBLE STRUCTURAL-CHANGES IN AMORPHOUS-SILICON, Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties, 69(2), 1994, pp. 177-196
THIN-FILM SIC AS AN OPTICAL AND OPTOELECTRONIC MATERIAL
Authors: KROTZ G MULLER G DERST G WILBERTZ C KALBITZER S
Citation: G. Krotz et al., THIN-FILM SIC AS AN OPTICAL AND OPTOELECTRONIC MATERIAL, DIAMOND AND RELATED MATERIALS, 3(4-6), 1994, pp. 917-921
RADIOLYTIC EFFECTS IN ORGANIC-COMPOUNDS INDUCED AND ANALYZED BY A N-15 BEAM
Authors: JANS S KALBITZER S OBERSCHACHTSIEK P BEHAR M
Citation: S. Jans et al., RADIOLYTIC EFFECTS IN ORGANIC-COMPOUNDS INDUCED AND ANALYZED BY A N-15 BEAM, Journal of materials research, 9(6), 1994, pp. 1596-1603
RANGE PARAMETERS OF C-13 IMPLANTS IN SEMICONDUCTOR AND METAL TARGETS
Authors: FRIEDLAND E HAYES M KALBITZER S OBERSCHACHTSIEK P
Citation: E. Friedland et al., RANGE PARAMETERS OF C-13 IMPLANTS IN SEMICONDUCTOR AND METAL TARGETS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 85(1-4), 1994, pp. 272-275
N-15 DOPPLER SPECTROSCOPY OF H-1 ON DIAMOND
Authors: JANS S KALBITZER S OBERSCHACHTSIEK P SELLSCHOP JPF
Citation: S. Jans et al., N-15 DOPPLER SPECTROSCOPY OF H-1 ON DIAMOND, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 85(1-4), 1994, pp. 321-325
THE NATURE OF THE STATE OF HYDROGEN ON THE SURFACE AND IN THE BULK OFNATURAL AND SYNTHETIC DIAMOND (USING ION-BEAM TECHNIQUES)
Authors: SELLSCHOP JPF CONNELL SH MADIBA CCP SIDERASHADDAD E KALBITZER S JANS S OBERSCHACTSIEK P BHARUTHRAM K SCHNEIDER J KIEFL R
Citation: Jpf. Sellschop et al., THE NATURE OF THE STATE OF HYDROGEN ON THE SURFACE AND IN THE BULK OFNATURAL AND SYNTHETIC DIAMOND (USING ION-BEAM TECHNIQUES), Vacuum, 45(4), 1994, pp. 397-402
ION-IMPLANTED DOPANT ENVIRONMENTS IN AMORPHOUS-SILICON
Authors: GREAVES GN DENT AJ DOBSON BR KALBITZER S MULLER G
Citation: Gn. Greaves et al., ION-IMPLANTED DOPANT ENVIRONMENTS IN AMORPHOUS-SILICON, JPN J A P 1, 32, 1993, pp. 622-624
EXPERIMENTAL-EVIDENCE FOR N-15 CHARGE-CHANGE PROCESSES AT A LOW-ENERGY REGIME
Authors: JANS S OBERSCHACHTSIEK P KALBITZER S BEHAR M
Citation: S. Jans et al., EXPERIMENTAL-EVIDENCE FOR N-15 CHARGE-CHANGE PROCESSES AT A LOW-ENERGY REGIME, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 83(1-2), 1993, pp. 1-4
INFLUENCE OF AL AND P DOPING ON OPTICAL AND ELECTRICAL-PROPERTIES OF ION-BEAM SYNTHESIZED SIC
Authors: BATTAGLIA A DERST G KALBITZER S
Citation: A. Battaglia et al., INFLUENCE OF AL AND P DOPING ON OPTICAL AND ELECTRICAL-PROPERTIES OF ION-BEAM SYNTHESIZED SIC, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 915-918
ION-IMPLANTATION DOPING OF POLYCRYSTALLINE SIC THIN-FILMS PREPARED BYPECVD
Authors: KROTZ G HELLMICH W MULLER G DERST G KALBITZER S
Citation: G. Krotz et al., ION-IMPLANTATION DOPING OF POLYCRYSTALLINE SIC THIN-FILMS PREPARED BYPECVD, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 927-930
ENVIRONMENTS OF ION-IMPLANTED DOPANTS IN AMORPHOUS-SILICON AT VARIOUSSTAGES OF ANNEALING
Authors: GREAVES GN DENT AJ DOBSON BR KALBITZER S MULLER G
Citation: Gn. Greaves et al., ENVIRONMENTS OF ION-IMPLANTED DOPANTS IN AMORPHOUS-SILICON AT VARIOUSSTAGES OF ANNEALING, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 966-972
ENERGY SPREAD OF A FOCUSED ION-BEAM SYSTEM WITH A SUPERTIP
Authors: MAISCH T WILBERTZ C MILLER T KALBITZER S
Citation: T. Maisch et al., ENERGY SPREAD OF A FOCUSED ION-BEAM SYSTEM WITH A SUPERTIP, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 1288-1291
ION-BEAM MODIFICATION OF MATERIALS - PROCEEDINGS OF THE 8TH INTERNATIONAL-CONFERENCE ON ION-BEAM MODIFICATION OF MATERIALS HEIDELBERG, GERMANY, 7-11 SEPTEMBER 1992 .1.
Authors: KALBITZER S MEYER O WOLF GK
Citation: S. Kalbitzer et al., ION-BEAM MODIFICATION OF MATERIALS - PROCEEDINGS OF THE 8TH INTERNATIONAL-CONFERENCE ON ION-BEAM MODIFICATION OF MATERIALS HEIDELBERG, GERMANY, 7-11 SEPTEMBER 1992 .1., Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 7-7
ENERGY-LOSS AND STRAGGLING OF MEV HE-4 IONS IN A SI SB MULTILAYER TARGET/
Authors: NIEMANN D OBERSCHACHTSIEK P KALBITZER S ZEINDL HP
Citation: D. Niemann et al., ENERGY-LOSS AND STRAGGLING OF MEV HE-4 IONS IN A SI SB MULTILAYER TARGET/, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 37-40
ON THE EFFICIENCY OF DEPOSITED ENERGY DENSITY FOR ION-BEAM MIXING PROCESSES WITH IONS IMPLANTED DURING AND AFTER THIN METAL-FILM DEPOSITION
Authors: TASHLYKOV IS BELYI IM BOBROVICH OG KALBITZER S MEYER O WOLF GK ENDERS B
Citation: Is. Tashlykov et al., ON THE EFFICIENCY OF DEPOSITED ENERGY DENSITY FOR ION-BEAM MIXING PROCESSES WITH IONS IMPLANTED DURING AND AFTER THIN METAL-FILM DEPOSITION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 98-101
EFFECT OF MG SEGREGATION AT GRAIN-BOUNDARIES ON CORROSION BEHAVIOR OFINTERMETALLIC COMPOUND NI3AL(B)
Authors: LIU XH JIAN BY WANG X YANG GQ ZOU SC SUN J SCHROER A ENSINGER W WOLF GK KALBITZER S TAKAHASHI K IWAKI M TANIGUCHI S
Citation: Xh. Liu et al., EFFECT OF MG SEGREGATION AT GRAIN-BOUNDARIES ON CORROSION BEHAVIOR OFINTERMETALLIC COMPOUND NI3AL(B), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 221-224
ENVIRONMENTS OF ION-IMPLANTED AS AND GA IMPURITIES IN AMORPHOUS-SILICON
Authors: GREAVES GN DENT AJ DOBSON BR KALBITZER S PIZZINI S MULLER G
Citation: Gn. Greaves et al., ENVIRONMENTS OF ION-IMPLANTED AS AND GA IMPURITIES IN AMORPHOUS-SILICON, Physical review. B, Condensed matter, 45(12), 1992, pp. 6517-6533
Risultati: 1-25 | 26-49 |