Citation: Srd. Kalingamudali et al., EXPERIMENTAL EVALUATION OF SEPARATE CONTRIBUTIONS TO IDEALITY FACTOR FOR THE BASE SURFACE RECOMBINATION CURRENT IN HETEROJUNCTION BIPOLAR-TRANSISTORS, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 238-241
Citation: Srd. Kalingamudali et al., RECOMBINATION CURRENT REDUCTION IN ALGAAS GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH POLYIMIDE DEPOSITION/, Solid-state electronics, 37(12), 1994, pp. 1977-1982
Authors:
KALINGAMUDALI SRD
WISMAYER AC
WOODS RC
ROBERTS JS
Citation: Srd. Kalingamudali et al., CURRENT GAIN INCREASE IN ALGAAS GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS USING ALGAAS LAYER OVERGROWTH/, Applied physics letters, 65(11), 1994, pp. 1403-1405