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Results: 1-19 |
Results: 19
LASER-INDUCED EMISSION OF ATOMS AND ELECTRONS FROM DEPOSITED SI ATOMSON THE SI(100) 2X1 SURFACE
Authors: YU IK KANASAKI J NAKAI Y ITOH N KANG KY
Citation: Ik. Yu et al., LASER-INDUCED EMISSION OF ATOMS AND ELECTRONS FROM DEPOSITED SI ATOMSON THE SI(100) 2X1 SURFACE, Journal of the Korean Physical Society, 33(1), 1998, pp. 91-96
LASER-INDUCED BOND BREAKING AND STRUCTURAL-CHANGES ON SI(111)-7X7 SURFACES
Authors: TANIMURA K KANASAKI J
Citation: K. Tanimura et J. Kanasaki, LASER-INDUCED BOND BREAKING AND STRUCTURAL-CHANGES ON SI(111)-7X7 SURFACES, Applied surface science, 129, 1998, pp. 33-39
LASER-INDUCED ELECTRONIC-BOND BREAKING AND DESORPTION OF ADATOMS ON SI(111)-(7X7)
Authors: KANASAKI J ISHIDA T ISHIKAWA K TANIMURA K
Citation: J. Kanasaki et al., LASER-INDUCED ELECTRONIC-BOND BREAKING AND DESORPTION OF ADATOMS ON SI(111)-(7X7), Physical review letters, 80(18), 1998, pp. 4080-4083
PHOTON ENERGY-DEPENDENCE OF THE LASER-INDUCED EMISSION YIELD OF SI ATOMS FROM THE SI(100) 2X1 SURFACE
Authors: YU IK KANASAKI J OKANO A NAKAI Y ITOH N
Citation: Ik. Yu et al., PHOTON ENERGY-DEPENDENCE OF THE LASER-INDUCED EMISSION YIELD OF SI ATOMS FROM THE SI(100) 2X1 SURFACE, Journal of physics. Condensed matter, 8(10), 1996, pp. 1475-1484
LASER-INDUCED BOND BREAKING OF THE ADATOMS OF THE SI(111)-7X7 SURFACE
Authors: ISHIKAWA K KANASAKI J NAKAI Y ITOH N
Citation: K. Ishikawa et al., LASER-INDUCED BOND BREAKING OF THE ADATOMS OF THE SI(111)-7X7 SURFACE, Surface science, 349(3), 1996, pp. 153-158
LOW-ENERGY LASER PHOTOELECTRON STUDY OF DEFECT STATES ON CLEAVED SI(111)2X1 SURFACES
Authors: YAMADA M KANASAKI J ITOH N WILLIAMS RT
Citation: M. Yamada et al., LOW-ENERGY LASER PHOTOELECTRON STUDY OF DEFECT STATES ON CLEAVED SI(111)2X1 SURFACES, Surface science, 349(1), 1996, pp. 107-110
SITE-SENSITIVE YIELD OF ATOMIC-EMISSION INDUCED BY LASER IRRADIATION ON SI(111)-7X7 SURFACE
Authors: ISHIKAWA K KANASAKI J TANIMURA K NAKAI Y
Citation: K. Ishikawa et al., SITE-SENSITIVE YIELD OF ATOMIC-EMISSION INDUCED BY LASER IRRADIATION ON SI(111)-7X7 SURFACE, Solid state communications, 98(10), 1996, pp. 913-916
SITE-SELECTIVE MANIPULATION OF SEMICONDUCTOR SURFACES BY LASER-BEAMS
Authors: ITOH N OKANO A KANASAKI J NAKAI Y
Citation: N. Itoh et al., SITE-SELECTIVE MANIPULATION OF SEMICONDUCTOR SURFACES BY LASER-BEAMS, Optoelectronics, 10(2), 1995, pp. 247-258
THE DIET FROM SEMICONDUCTOR SURFACES BY EXCITATION OF VALENCE-ELECTRONS
Authors: KANASAKI J OKANO A ISHIKAWA K NAKAI Y ITOH N
Citation: J. Kanasaki et al., THE DIET FROM SEMICONDUCTOR SURFACES BY EXCITATION OF VALENCE-ELECTRONS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 101(1-2), 1995, pp. 93-102
LASER-BEAM INTERACTION WITH DEFECTS ON SEMICONDUCTOR SURFACES - AN APPROACH TO GENERATION OF DEFECT-FREE SURFACES
Authors: ITOH N KANASAKI J OKANO A NAKAI Y
Citation: N. Itoh et al., LASER-BEAM INTERACTION WITH DEFECTS ON SEMICONDUCTOR SURFACES - AN APPROACH TO GENERATION OF DEFECT-FREE SURFACES, Annual review of materials science, 25, 1995, pp. 97-127
ELECTRONIC PROCESSES IN LASER-INDUCED GA(0) EMISSION AND LASER-ABLATION OF THE GAP(110) AND GAAS(110) SURFACES
Authors: OKANO A KANASAKI J NAKAI Y ITOH N
Citation: A. Okano et al., ELECTRONIC PROCESSES IN LASER-INDUCED GA(0) EMISSION AND LASER-ABLATION OF THE GAP(110) AND GAAS(110) SURFACES, Journal of physics. Condensed matter, 6(14), 1994, pp. 2697-2712
DEFECT-INITIATED ATOMIC EMISSIONS FROM SEMICONDUCTOR SURFACES INDUCEDBY LASER IRRADIATION - ELECTRONIC CLEANING OF DEFECTS ON SURFACES
Authors: KANASAKI J OKANO A NAKAI Y ITOH N
Citation: J. Kanasaki et al., DEFECT-INITIATED ATOMIC EMISSIONS FROM SEMICONDUCTOR SURFACES INDUCEDBY LASER IRRADIATION - ELECTRONIC CLEANING OF DEFECTS ON SURFACES, Applied surface science, 80, 1994, pp. 100-103
DEFECT-EXCITATION PROCESSES INVOLVED IN LASER-INDUCED ATOMIC-EMISSIONAND LASER-ABLATION OF NONMETALLIC SOLIDS
Authors: SINGH J ITOH N NAKAI Y KANASAKI J OKANO A
Citation: J. Singh et al., DEFECT-EXCITATION PROCESSES INVOLVED IN LASER-INDUCED ATOMIC-EMISSIONAND LASER-ABLATION OF NONMETALLIC SOLIDS, Physical review. B, Condensed matter, 50(16), 1994, pp. 11730-11737
EMISSION OF NA ATOMS FROM UNDAMAGED AND SLIGHTLY DAMAGED NACL (100) SURFACES BY ELECTRONIC EXCITATION
Authors: KUBO T OKANO A KANASAKI J ISHIKAWA K NAKAI Y ITOH N
Citation: T. Kubo et al., EMISSION OF NA ATOMS FROM UNDAMAGED AND SLIGHTLY DAMAGED NACL (100) SURFACES BY ELECTRONIC EXCITATION, Physical review. B, Condensed matter, 49(7), 1994, pp. 4931-4937
ENERGIES FOR ATOMIC EMISSIONS FROM DEFECT SITES ON THE SI SURFACES - THE EFFECTS OF HALOGEN ADSORBATES
Authors: KHOO GS ONG CK ITOH N KANASAKI J
Citation: Gs. Khoo et al., ENERGIES FOR ATOMIC EMISSIONS FROM DEFECT SITES ON THE SI SURFACES - THE EFFECTS OF HALOGEN ADSORBATES, Journal of applied physics, 75(1), 1994, pp. 255-258
LASER-INDUCED ELECTRONIC EMISSIONS OF SI ATOMS FROM SI(100) SURFACES
Authors: KANASAKI J YU IK NAKAI Y ITOH N
Citation: J. Kanasaki et al., LASER-INDUCED ELECTRONIC EMISSIONS OF SI ATOMS FROM SI(100) SURFACES, JPN J A P 2, 32(6B), 1993, pp. 859-862
DEFECT-INITIATED EMISSION OF GA ATOMS FROM THE GAAS (110) SURFACE-INDUCED BY PULSED-LASER IRRADIATION
Authors: KANASAKI J OKANO A ISHIKAWA K NAKAI Y ITOH N
Citation: J. Kanasaki et al., DEFECT-INITIATED EMISSION OF GA ATOMS FROM THE GAAS (110) SURFACE-INDUCED BY PULSED-LASER IRRADIATION, Journal of physics. Condensed matter, 5(36), 1993, pp. 6497-6506
VACANCY-INITIATED LASER SPUTTERING FROM SEMICONDUCTOR SURFACES
Authors: ITOH N OKANO A HATTORI K KANASAKI J NAKAI Y
Citation: N. Itoh et al., VACANCY-INITIATED LASER SPUTTERING FROM SEMICONDUCTOR SURFACES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 82(2), 1993, pp. 310-316
ENHANCEMENT OF LASER-INDUCED DEFECT-INITIATED GA-0 EMISSION FROM GAAS(110) SURFACES BY BR ADSORPTION
Authors: KANASAKI J MATSUURA AY NAKAI Y ITOH N HAGLUND RF
Citation: J. Kanasaki et al., ENHANCEMENT OF LASER-INDUCED DEFECT-INITIATED GA-0 EMISSION FROM GAAS(110) SURFACES BY BR ADSORPTION, Applied physics letters, 62(26), 1993, pp. 3493-3495
Risultati: 1-19 |