Authors: AVERKIEV NS KAPITONOVA LM LEBEDEV AA REMENYUK AD SMIMOVA NN SHIK AY

Citation: Ns. Averkiev et al., FREQUENCY-DEPENDENCE OF THE CAPACITANCE OF STRUCTURES BASED ON POROUSSILICON, Semiconductors, 30(12), 1996, pp. 1135-1137

Authors: AVERKIEV NS KAPITONOVA LM LEBEDEV AA LEBEDEV AA

Citation: Ns. Averkiev et al., FREQUENCY-DEPENDENCE OF STRUCTURE CAPACIT Y BASED ON POROUS 6H-SIC, Pis'ma v Zurnal tehniceskoj fiziki, 22(18), 1996, pp. 43-46

Authors: AVERKIEV NS KAPITONOVA LM LEBEDEV AA POLUSHINA IK SMIRNOVA NN

Citation: Ns. Averkiev et al., DEPENDENCE OF THE CAPACITY OF POROUS SILI CON NANOSTRUCTURES ON THE MAGNETIC-FIELD, Pis'ma v Zurnal tehniceskoj fiziki, 22(17), 1996, pp. 15-18

Authors: ASTROVA EV BELOV SV LEBEDEV AA REMENYUK AD RUD YV VITMAN RF KAPITONOVA LM

Citation: Ev. Astrova et al., PHOTOLUMINESCENCE STUDIES OF POROUS SILICON AND SILICON-HYDROGEN FILMS, Physica status solidi. a, Applied research, 145(2), 1994, pp. 407-413

Authors: VITMAN RF KAPITONOVA LM LEBEDEV AA STARUKHIN AN RAZBIRIN BS

Citation: Rf. Vitman et al., EMISSION AND IR-ABSORPTION-SPECTRA OF LUM INESCENT FILMS ON SILICON, Pis'ma v Zurnal tehniceskoj fiziki, 19(6), 1993, pp. 10-13

Authors: KAPITONOVA LM LEBEDEV AA REMENYUK AD RUD YV

Citation: Lm. Kapitonova et al., TEMPERATURE EXTINGUISHING OF PHOTOLUMINES CENCE OF POROUS SILICON, Pis'ma v Zurnal tehniceskoj fiziki, 19(13), 1993, pp. 32-35