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Authors: SEGLINS J KAPPHAN S
Citation: J. Seglins et S. Kapphan, HUGE SHIFT OF FUNDAMENTAL ELECTRONIC ABSORPTION-EDGE IN SR1-XBAXNB2O6CRYSTALS AT ELEVATED-TEMPERATURES, Physica status solidi. b, Basic research, 188(2), 1995, pp. 43-45

Authors: HUNSCHE S GRONE A GRETEN G KAPPHAN S PANKRATH R SEGLINS J
Citation: S. Hunsche et al., OH OD-IR ABSORPTION-BANDS IN SRXBA1-XNB2O6, Physica status solidi. a, Applied research, 148(2), 1995, pp. 629-634

Authors: GRONE A KAPPHAN S
Citation: A. Grone et S. Kapphan, SHARP, TEMPERATURE-DEPENDENT OH OD IR-ABSORPTION BANDS IN NEARLY STOICHIOMETRIC (VTE) LINBO3/, Journal of physics and chemistry of solids, 56(5), 1995, pp. 687-701

Authors: FENG XQ HU GQ YIN ZW HUANG YP KAPPHAN S FISHER C ZHOU FZ YANG Y FAN DY
Citation: Xq. Feng et al., GROWTH, LASER AND MAGNETOOPTIC PROPERTIES OF ND-DOPED BI4GE3O12 CRYSTALS, Materials science & engineering. B, Solid-state materials for advanced technology, 23(2), 1994, pp. 83-87

Authors: VOIGT P KAPPHAN S
Citation: P. Voigt et S. Kapphan, EXPERIMENTAL-STUDY OF 2ND-HARMONIC GENERATION BY DIPOLAR CONFIGURATIONS IN PURE AND LI-DOPED KTAO3 AND ITS VARIATION UNDER ELECTRIC-FIELD, Journal of physics and chemistry of solids, 55(9), 1994, pp. 853-869

Authors: STEGER G KAPPHAN S
Citation: G. Steger et S. Kapphan, SOLID-STATE ETALON TUNING OF A SINGLE-MODE IRF(A)(II)-CENTER LASER, Measurement science & technology, 4(10), 1993, pp. 1117-1121
Risultati: 1-25 | 26-31 |