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Results:
1-8
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Results: 8
Authors:
KASAI J
KAWATA M
Citation: J. Kasai et M. Kawata, MICROPHOTOLUMINESCENCE OF OVAL DEFECTS IN A GAAS LAYER GROWN BY MOLECULAR-BEAM EPITAXY, Applied physics letters, 73(14), 1998, pp. 2012-2014
Authors:
KASAI J
TANAKA S
HIGUCHI K
KATAYAMA Y
Citation: J. Kasai et al., STRUCTURAL AND OPTICAL CHARACTERIZATIONS OF SINGLE 3-DIMENSIONALLY CONFINED GAAS ALAS STRUCTURES GROWN ON PATTERNED GAAS(001) SUBSTRATES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(4), 1997, pp. 862-869
Authors:
KASAI J
KAWANISHI H
KATAYAMA Y
Citation: J. Kasai et al., MICROPHOTOLUMINESCENCE OF SINGLE DISKS COMPRISING BURIED QUANTUM-WELLS FABRICATED BY IN-SITU ELECTRON-BEAM LITHOGRAPHY, Applied physics letters, 70(11), 1997, pp. 1450-1452
Authors:
MITANI K
ODA H
IMAMURA Y
KASAI J
Citation: K. Mitani et al., EFFECTS OF ANNEALING ON DAMAGE IN ALGAAS INDUCED BY ELECTRON-CYCLOTRON-RESONANCE SF6 CHF3 PLASMA-ETCHING/, Journal of the Electrochemical Society, 143(3), 1996, pp. 1151-1155
Authors:
SUGAWA S
KASAI J
KAMIYAMA S
OKAYAMA H
SORIN T
ITO M
Citation: S. Sugawa et al., FULLY AUTOMATED FREE T4 ASSAY (A-LPIA FT4 ASSAY) INSUSCEPTIBLE TO AUTOANTIBODIES, Clinical chemistry, 42(6), 1996, pp. 390-390
Authors:
MITANI K
ODA H
KASAI J
IMAMURA Y
Citation: K. Mitani et al., GAAS RADIATION-DAMAGE INDUCED BY ELECTRON-CYCLOTRON-RESONANCE PLASMA-ETCHING WITH SF6 CHF3/, JPN J A P 1, 34(8A), 1995, pp. 3970-3975
Authors:
TAMURA M
HASHIMOTO A
KASAI J
NISHIDA A
Citation: M. Tamura et al., THREADING DISLOCATIONS IN GAAS ON PRE-PATTERNED SI AND IN POST-PATTERNED GAAS ON SI, Journal of crystal growth, 147(3-4), 1995, pp. 264-273
Authors:
MOCHIZUKI K
KASAI J
TANOUE T
Citation: K. Mochizuki et al., MEASUREMENT OF THE RECOMBINATION VELOCITY AT SINGLE CRYSTALLINE POLYCRYSTALLINE GAAS INTERFACES USING TIME-RESOLVED PHOTOLUMINESCENCE/, Applied physics letters, 66(16), 1995, pp. 2092-2094
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1-8
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