Authors:
YOKOYA T
CHAINANI A
TAKAHASHI T
KATAYAMAYOSHIDA H
KASAI M
TOKURA Y
Citation: T. Yokoya et al., ANGLE-RESOLVED AND RESONANT PHOTOEMISSION OF STUDY SR2RUO4, Journal of physics and chemistry of solids, 56(12), 1995, pp. 1885-1886
Citation: T. Sasaki et al., NEW ACCEPTOR-RELATED COMPENSATION MECHANISMS IN WIDE-BAND GAP SEMICONDUCTORS, Physica. B, Condensed matter, 185(1-4), 1993, pp. 159-163
Citation: H. Katayamayoshida et T. Takahashi, COMPARATIVE-STUDY ON ELECTRONIC-STRUCTURE OF DOPED FULLERENES AND HIGH-TC OXIDE SUPERCONDUCTORS, Science Reports of the Research Institutes, Tohoku University, Series A: Physics, Chemistry, and Metallurgy, 39(1), 1993, pp. 19-26
Citation: N. Orita et H. Katayamayoshida, PREDICTION OF INTRINSIC DEFECTS IN HYDROGENATED AMORPHOUS-SILICON BY AB-INITIO MOLECULAR-DYNAMICS, Science Reports of the Research Institutes, Tohoku University, Series A: Physics, Chemistry, and Metallurgy, 39(1), 1993, pp. 33-36
Citation: H. Katayamayoshida et T. Takahashi, SIMILARITY AND DISSIMILARITY OF DOPED FULLERENES AND OXIDE SUPERCONDUCTORS FROM THE VIEWPOINT OF ELECTRONIC-STRUCTURE, Journal of physics and chemistry of solids, 54(12), 1993, pp. 1817-1824
Citation: G. Kido et al., DE-HAAS-VAN-ALPHEN EFFECT AND COLLAPSE OF MOTT-HUBBARD FRAMEWORK IN HIGH-T(C) COPPER-OXIDES, Journal of physics and chemistry of solids, 54(10), 1993, pp. 1259-1259