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1.48-MU-M HIGH-POWER GAINASP-INP GRADED-INDEX SEPARATE-CONFINEMENT-HETEROSTRUCTURE MULTIPLE-QUANTUM-WELL LASER-DIODES
Authors:
NAMEGAYA T KATSUMI R IWAI N NAMIKI S KASUKAWA A HIRATANI Y KIKUTA T
Citation:
T. Namegaya et al., 1.48-MU-M HIGH-POWER GAINASP-INP GRADED-INDEX SEPARATE-CONFINEMENT-HETEROSTRUCTURE MULTIPLE-QUANTUM-WELL LASER-DIODES, IEEE journal of quantum electronics, 29(6), 1993, pp. 1924-1931
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