AAAAAA

   
Results: 1-10 |
Results: 10
RELAXATION OF LIGHT-INDUCED METASTABLE STATE OF BORON-DOPED P-TYPE A-SI-H
Authors: KAZANSKII AG LARINA EV
Citation: Ag. Kazanskii et Ev. Larina, RELAXATION OF LIGHT-INDUCED METASTABLE STATE OF BORON-DOPED P-TYPE A-SI-H, Semiconductors, 32(1), 1998, pp. 105-108
ANOMALOUS RELAXATION OF LIGHT-INDUCED STATES OF A-SI-H
Authors: KAZANSKII AG KUROVA IA ORMONT NN ZVYAGIN IP
Citation: Ag. Kazanskii et al., ANOMALOUS RELAXATION OF LIGHT-INDUCED STATES OF A-SI-H, Journal of non-crystalline solids, 230, 1998, pp. 306-310
EFFECT OF ILLUMINATION TIME ON THE ANNEALING OF OPTICALLY CREATED METASTABLE DEFECTS IN P-TYPE A-SI-H
Authors: KAZANSKII AG
Citation: Ag. Kazanskii, EFFECT OF ILLUMINATION TIME ON THE ANNEALING OF OPTICALLY CREATED METASTABLE DEFECTS IN P-TYPE A-SI-H, Semiconductors, 31(3), 1997, pp. 287-289
EFFECT OF PROLONGED ILLUMINATION ON THE PROPERTIES OF COMPENSATED HYDROGENATED SILICON A-SI-H
Authors: KAZANSKII AG YARKIN DG
Citation: Ag. Kazanskii et Dg. Yarkin, EFFECT OF PROLONGED ILLUMINATION ON THE PROPERTIES OF COMPENSATED HYDROGENATED SILICON A-SI-H, Semiconductors, 30(4), 1996, pp. 397-399
NONMONOTONE KINETICS OF PERSISTENT PHOTOCONDUCTIVITY IN COMPENSATED A-SI-H FILMS
Authors: KAZANSKII AG KUROVA IA ZVYAGIN IP YARKIN DG
Citation: Ag. Kazanskii et al., NONMONOTONE KINETICS OF PERSISTENT PHOTOCONDUCTIVITY IN COMPENSATED A-SI-H FILMS, Journal of non-crystalline solids, 200, 1996, pp. 470-473
THE INFLUENCE OF THE DOPANTS CONCENTRATIO N ON THE CONDUCTIVITY, PHOTOCONDUCTIVITY AND ABSORPTION-COEFFICIENT OF THE COMPENSATED ALPHA-SI-H
Authors: KAZANSKII AG MELNIKOV AV YARKIN DG
Citation: Ag. Kazanskii et al., THE INFLUENCE OF THE DOPANTS CONCENTRATIO N ON THE CONDUCTIVITY, PHOTOCONDUCTIVITY AND ABSORPTION-COEFFICIENT OF THE COMPENSATED ALPHA-SI-H, Vestnik Moskovskogo universiteta. Seria 3. Fizika, astronomia, 36(1), 1995, pp. 56-60
DRIFT MOBILITY OF ELECTRONS IN PHOSPHORUS-DOPED A-SIH
Authors: KAZANSKII AG YARKIN DG
Citation: Ag. Kazanskii et Dg. Yarkin, DRIFT MOBILITY OF ELECTRONS IN PHOSPHORUS-DOPED A-SIH, Semiconductors, 28(5), 1994, pp. 519-521
ON THE DANGLING-BOND RELAXATION PROBLEM IN HYDROGENATED AMORPHOUS-SILICON
Authors: KAZANSKII AG MAO Y KONG GL
Citation: Ag. Kazanskii et al., ON THE DANGLING-BOND RELAXATION PROBLEM IN HYDROGENATED AMORPHOUS-SILICON, Solid state communications, 91(6), 1994, pp. 447-449
INFLUENCE OF DOPING ON THE PHOTOCONDUCTIVITY OF A-SI-H
Authors: KAZANSKII AG SHAMONINA EA
Citation: Ag. Kazanskii et Ea. Shamonina, INFLUENCE OF DOPING ON THE PHOTOCONDUCTIVITY OF A-SI-H, Semiconductors, 27(10), 1993, pp. 932-934
INFLUENCE OF THE DOPANT CONCENTRATION AND TEMPERATURE ON THE STAEBLER-WRONSKI EFFECT IN PHOSPHORUS-DOPED A-SI-H FILMS
Authors: KAZANSKII AG YARKIN DG
Citation: Ag. Kazanskii et Dg. Yarkin, INFLUENCE OF THE DOPANT CONCENTRATION AND TEMPERATURE ON THE STAEBLER-WRONSKI EFFECT IN PHOSPHORUS-DOPED A-SI-H FILMS, Semiconductors, 27(10), 1993, pp. 935-937
Risultati: 1-10 |