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THE DEVELOPMENT OF A HIGHLY SELECTIVE KI I-2/H2O/H2SO4 ETCHANT FOR THE SELECTIVE ETCHING OF AL0.3GA0.7AS OVER GAAS/
Authors:
LAU WS CHOR EF KEK SP AZIZ WHB LIM HC HENG CH ZHAO R
Citation:
Ws. Lau et al., THE DEVELOPMENT OF A HIGHLY SELECTIVE KI I-2/H2O/H2SO4 ETCHANT FOR THE SELECTIVE ETCHING OF AL0.3GA0.7AS OVER GAAS/, JPN J A P 1, 36(6A), 1997, pp. 3770-3774
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