Authors: DIMEO F CAVICCHI RE SEMANCIK S SUEHLE JS TEA NH SMALL J ARMSTRONG JT KELLIHER JT

Citation: F. Dimeo et al., IN-SITU CONDUCTIVITY CHARACTERIZATION OF OXIDE THIN-FILM GROWTH PHENOMENA ON MICROHOTPLATES, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(1), 1998, pp. 131-138

Authors: BACHMANN KJ DIETZ N MILLER AE VENABLES D KELLIHER JT

Citation: Kj. Bachmann et al., HETEROEPITAXY OF LATTICE-MATCHED COMPOUND SEMICONDUCTORS ON SILICON, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(3), 1995, pp. 696-704

Authors: KELLIHER JT MILLER AE DIETZ N HABERMEHL S CHEN YL LU Z LUCOVSKY G BACHMANN KJ

Citation: Jt. Kelliher et al., INTERRUPTED CYCLE CHEMICAL BEAM EPITAXY OF GALLIUM-PHOSPHIDE ON SILICON WITH OR WITHOUT PHOTON ASSISTANCE, Applied surface science, 86(1-4), 1995, pp. 453-456

Authors: DIETZ N MILLER A KELLIHER JT VENABLES D BACHMANN KJ

Citation: N. Dietz et al., MIGRATION-ENHANCED PULSED CHEMICAL BEAM EPITAXY OF GAP ON SI(001), Journal of crystal growth, 150(1-4), 1995, pp. 691-695

Authors: KELLIHER JT THORNTON J DIETZ N LUCOVSKY G BACHMANN KJ

Citation: Jt. Kelliher et al., LOW-TEMPERATURE CHEMICAL BEAM EPITAXY OF GALLIUM PHOSPHIDE SILICON HETEROSTRUCTURES/, Materials science & engineering. B, Solid-state materials for advanced technology, 22(1), 1993, pp. 97-102