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Results: 1-8 |
Results: 8
BEHAVIOR OF SI PHOTOELECTRODES UNDER HIGH-LEVEL INJECTION CONDITIONS .1. STEADY-STATE CURRENT-VOLTAGE PROPERTIES AND QUASI-FERMI LEVEL POSITIONS UNDER ILLUMINATION
Authors: TAN MX KENYON CN KRUGER O LEWIS NS
Citation: Mx. Tan et al., BEHAVIOR OF SI PHOTOELECTRODES UNDER HIGH-LEVEL INJECTION CONDITIONS .1. STEADY-STATE CURRENT-VOLTAGE PROPERTIES AND QUASI-FERMI LEVEL POSITIONS UNDER ILLUMINATION, JOURNAL OF PHYSICAL CHEMISTRY B, 101(15), 1997, pp. 2830-2839
BEHAVIOR OF SI PHOTOELECTRODES UNDER HIGH-LEVEL INJECTION CONDITIONS .2. EXPERIMENTAL MEASUREMENTS AND DIGITAL SIMULATIONS OF THE BEHAVIOR OF QUASI-FERMI LEVELS UNDER ILLUMINATION AND APPLIED BIAS
Authors: KRUGER O KENYON CN TAN MX LEWIS NS
Citation: O. Kruger et al., BEHAVIOR OF SI PHOTOELECTRODES UNDER HIGH-LEVEL INJECTION CONDITIONS .2. EXPERIMENTAL MEASUREMENTS AND DIGITAL SIMULATIONS OF THE BEHAVIOR OF QUASI-FERMI LEVELS UNDER ILLUMINATION AND APPLIED BIAS, JOURNAL OF PHYSICAL CHEMISTRY B, 101(15), 1997, pp. 2840-2849
BEHAVIOR OF SI PHOTOELECTRODES UNDER HIGH-LEVEL INJECTION CONDITIONS .3. TRANSIENT AND STEADY-STATE MEASUREMENTS OF THE QUASI-FERMI LEVELS AT SI CH3OH CONTACTS/
Authors: KENYON CN TAN MX KRUGER O LEWIS NS
Citation: Cn. Kenyon et al., BEHAVIOR OF SI PHOTOELECTRODES UNDER HIGH-LEVEL INJECTION CONDITIONS .3. TRANSIENT AND STEADY-STATE MEASUREMENTS OF THE QUASI-FERMI LEVELS AT SI CH3OH CONTACTS/, JOURNAL OF PHYSICAL CHEMISTRY B, 101(15), 1997, pp. 2850-2860
NEW APPROACHES TO SOLAR-ENERGY CONVERSION USING SI LIQUID JUNCTIONS/
Authors: FAJARDO AM KARP CD KENYON CN POMYKAL KE SHREVE GA TAN MX LEWIS NS
Citation: Am. Fajardo et al., NEW APPROACHES TO SOLAR-ENERGY CONVERSION USING SI LIQUID JUNCTIONS/, Solar energy materials and solar cells, 38(1-4), 1995, pp. 279-303
EFFICIENT REDUCTIVE OR OXIDATIVE CURRENT FLOW ACROSS 100 MU-M USING AN SI PHOTOELECTRODE UNDER HIGH-LEVEL INJECTION
Authors: TAN MX KENYON CN CHRISTIAN W WILISCH A LEWIS NS
Citation: Mx. Tan et al., EFFICIENT REDUCTIVE OR OXIDATIVE CURRENT FLOW ACROSS 100 MU-M USING AN SI PHOTOELECTRODE UNDER HIGH-LEVEL INJECTION, Journal of the Electrochemical Society, 142(4), 1995, pp. 62-64
EXPERIMENTAL-MEASUREMENT OF QUASI-FERMI LEVELS AT AN ILLUMINATED SEMICONDUCTOR LIQUID CONTACT/
Authors: TAN MX KENYON CN LEWIS NS
Citation: Mx. Tan et al., EXPERIMENTAL-MEASUREMENT OF QUASI-FERMI LEVELS AT AN ILLUMINATED SEMICONDUCTOR LIQUID CONTACT/, Journal of physical chemistry, 98(19), 1994, pp. 4959-4962
EFFECTS OF METAL-ION CHEMISORPTION ON GAAS SURFACE RECOMBINATION - PICOSECOND LUMINESCENCE DECAY MEASUREMENTS
Authors: RYBA GN KENYON CN LEWIS NS
Citation: Gn. Ryba et al., EFFECTS OF METAL-ION CHEMISORPTION ON GAAS SURFACE RECOMBINATION - PICOSECOND LUMINESCENCE DECAY MEASUREMENTS, Journal of physical chemistry, 97(51), 1993, pp. 13814-13819
ANALYSIS OF TIME-RESOLVED PHOTOCURRENT TRANSIENTS AT SEMICONDUCTOR LIQUID INTERFACES
Authors: KENYON CN RYBA GN LEWIS NS
Citation: Cn. Kenyon et al., ANALYSIS OF TIME-RESOLVED PHOTOCURRENT TRANSIENTS AT SEMICONDUCTOR LIQUID INTERFACES, Journal of physical chemistry, 97(49), 1993, pp. 12928-12936
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