Authors: MATTAUSCH HJ ALLINGER R KERBER M BRAUN H

Citation: Hj. Mattausch et al., A DEGRADATION MECHANISM OF EEPROM CELL OPERATIONAL MARGINS WHICH REMAINS UNDETECTED BY CONVENTIONAL QUALITY ASSURANCE, IEEE electron device letters, 19(11), 1998, pp. 402-404

Authors: SCHWALKE U KERBER M KOLLER K JACOBS HJ

Citation: U. Schwalke et al., EXTIGATE - THE ULTIMATE PROCESS ARCHITECTURE FOR SUBMICRON CMOS TECHNOLOGIES, I.E.E.E. transactions on electron devices, 44(11), 1997, pp. 2070-2077

Authors: MATTAUSCH HJ KERBER M ALLINGER R BRAUN H

Citation: Hj. Mattausch et al., LOCALIZED HIGHLY STABLE ELECTRICAL PASSIVATION OF THE THERMAL OXIDE ON NONPLANAR POLYCRYSTALLINE SILICON, Applied physics letters, 71(23), 1997, pp. 3391-3393

Authors: KERBER M PRACKLEIN Z

Citation: M. Kerber et Z. Pracklein, USING TACTICS TO REFORMULATE FORMULAS FOR RESOLUTION THEOREM-PROVING, Annals of mathematics and artificial intelligence, 18(2-4), 1996, pp. 221-241

Authors: KERBER M

Citation: M. Kerber, ENERGY-DISTRIBUTION OF SLOW TRAPPING STATES IN METAL-OXIDE-SEMICONDUCTOR DEVICES AFTER FOWLER-NORDHEIM INJECTION, Journal of applied physics, 74(3), 1993, pp. 2125-2127