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Results:
1-8
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Results: 8
Authors:
JANAPATY V
ONER M
BHUVA BL
BUI N
KERNS SE
Citation: V. Janapaty et al., EFFECTS OF DIE LOCATION ON HOT-CARRIER RESPONSE OF PLASMA-ETCHED NMOSDEVICES, IEEE electron device letters, 19(12), 1998, pp. 455-457
Authors:
AKIL N
KERNS SE
KERNS DV
HOFFMANN A
CHARLES JP
Citation: N. Akil et al., PHOTON GENERATION BY SILICON DIODES IN AVALANCHE BREAKDOWN, Applied physics letters, 73(7), 1998, pp. 871-872
Authors:
PAGEY MP
MILANOWSKI RJ
HENEGAR KT
BHUVA BL
KERNS SE
Citation: Mp. Pagey et al., COMPARISON OF FORMING GAS, NITROGEN, AND VACUUM ANNEAL EFFECTS ON X-RAY-IRRADIATED MOSFETS, IEEE transactions on nuclear science, 42(6), 1995, pp. 1758-1763
Authors:
VELACHERI S
MASSENGILL LW
KERNS SE
Citation: S. Velacheri et al., SINGLE-EVENT-INDUCED CHARGE COLLECTION AND DIRECT CHANNEL CONDUCTION IN SUBMICRON MOSFETS, IEEE transactions on nuclear science, 41(6), 1994, pp. 2103-2111
Authors:
RANGAVAJJHALA VS
BHUVA BL
KERNS SE
Citation: Vs. Rangavajjhala et al., STATISTICAL DEGRADATION ANALYSIS OF DIGITAL CMOS ICS, IEEE transactions on computer-aided design of integrated circuits and systems, 12(6), 1993, pp. 837-844
Authors:
MILANOWSKI RJ
PAGEY MP
MATTA AI
BHUVA BL
MASSENGILL LW
KERNS SE
Citation: Rj. Milanowski et al., COMBINED EFFECT OF X-IRRADIATION AND FORMING GAS ANNEAL ON THE HOT-CARRIER RESPONSE OF MOS OXIDES, IEEE transactions on nuclear science, 40(6), 1993, pp. 1360-1366
Authors:
MASSENGILL LW
ALLES ML
KERNS SE
JONES KL
Citation: Lw. Massengill et al., EFFECTS OF PROCESS PARAMETER DISTRIBUTIONS AND ION STRIKE LOCATIONS ON SEU CROSS-SECTION DATA, IEEE transactions on nuclear science, 40(6), 1993, pp. 1804-1811
Authors:
BROWN AO
BHUVA B
KERNS SE
STAPOR WJ
Citation: Ao. Brown et al., PRACTICAL APPROACH TO DETERMINING CHARGE COLLECTED IN MULTIJUNCTION STRUCTURES DUE TO THE ION SHUNT EFFECT, IEEE transactions on nuclear science, 40(6), 1993, pp. 1918-1925
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1-8
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