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Results: 1-9 |
Results: 9

Authors: KHAIT YL
Citation: Yl. Khait, EFFECTS OF WEAK MAGNETIC-FIELDS ON POSTIMPLANTATION DAMAGE IN SUPERCONDUCTING OXIDES, Zeitschrift fur Physik. B, Condensed matter, 101(1), 1996, pp. 47-55

Authors: KHAIT YL
Citation: Yl. Khait, NOVEL EFFECTS OF WEAK MAGNETIC-FIELDS ON POSTIMPLANTATION DAMAGE IN SEMICONDUCTORS AND SUPERCONDUCTING CERAMICS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 116(1-4), 1996, pp. 516-520

Authors: FREIMAN W EYAL A KHAIT YL BESERMAN R DETTMER K
Citation: W. Freiman et al., KINETICS OF PROCESSES IN THE TI-SI1-XGEX SYSTEMS, Applied physics letters, 69(25), 1996, pp. 3821-3823

Authors: KHAIT YL SNAPIRO IB SHECHTER H
Citation: Yl. Khait et al., ANOMALOUS TEMPERATURE DYNAMICS OF IMPURITIES IN METALS - A KINETIC-MODEL, Physical review. B, Condensed matter, 52(13), 1995, pp. 9392-9401

Authors: KHAIT YL WEIL R
Citation: Yl. Khait et R. Weil, ARRHENIUS PARAMETERS AND THE COMPENSATION EFFECT IN CRYSTALLIZATION AND DIFFUSION IN AMORPHOUS SI-H(F) IN THE PRESENCE OR ABSENCE OF METAL CONTACTS, Journal of applied physics, 78(11), 1995, pp. 6504-6513

Authors: DETTMER K FREIMAN W LEVY M KHAIT YL BESERMAN R
Citation: K. Dettmer et al., KINETICS OF INTERDIFFUSION IN STRAINED NANOMETER PERIOD SI GE SUPERLATTICES STUDIED BY RAMAN-SCATTERING/, Applied physics letters, 66(18), 1995, pp. 2376-2378

Authors: KHAIT YL BESERMAN R SHAW D DETTMER K
Citation: Yl. Khait et al., DIFFUSION-MELTING CORRELATIONS AND THE COMPENSATION EFFECT IN ATOMIC DIFFUSION IN SI AND GE, Physical review. B, Condensed matter, 50(20), 1994, pp. 14893-14902

Authors: EDELMAN F CYTERMANN C BRENER R EIZENBERG M KHAIT YL WEIL R BEYER W
Citation: F. Edelman et al., CRYSTALLIZATION IN FLUORINATED AND HYDROGENATED AMORPHOUS-SILICON THIN-FILMS, Journal of applied physics, 75(12), 1994, pp. 7875-7880

Authors: KHAIT YL RICHTER V
Citation: Yl. Khait et V. Richter, REDUCTION OF POSTIMPLANTATION DAMAGE IN SEMICONDUCTORS BY WEAK MAGNETIC-FIELDS, Journal of physics. D, Applied physics, 26(10), 1993, pp. 1806-1809
Risultati: 1-9 |