Authors: RAYCHAUDHURI A DEEN MJ KING MIH KOLK J

Citation: A. Raychaudhuri et al., FINDING THE ASYMMETRIC PARASITIC SOURCE AND DRAIN RESISTANCES FROM THE AC CONDUCTANCES OF A SINGLE MOS-TRANSISTOR, Solid-state electronics, 39(6), 1996, pp. 909-913

Authors: RAYCHAUDHURI A DEEN MJ KWAN WS KING MIH

Citation: A. Raychaudhuri et al., FEATURES AND MECHANISMS OF THE SATURATING HOT-CARRIER DEGRADATION IN LDD NMOSFETS, I.E.E.E. transactions on electron devices, 43(7), 1996, pp. 1114-1122

Authors: RAYCHAUDHURI A DEEN MJ KING MIH KWAN WS

Citation: A. Raychaudhuri et al., A SIMPLE METHOD TO QUALIFY THE LDD STRUCTURE AGAINST THE EARLY MODE OF HOT-CARRIER DEGRADATION, I.E.E.E. transactions on electron devices, 43(1), 1996, pp. 110-115

Authors: RAYCHAUDHURI A KOLK J DEEN MJ KING MIH

Citation: A. Raychaudhuri et al., A SIMPLE METHOD TO EXTRACT THE ASYMMETRY IN PARASITIC SOURCE AND DRAIN RESISTANCES FROM MEASUREMENTS ON A MOS-TRANSISTOR, I.E.E.E. transactions on electron devices, 42(7), 1995, pp. 1388-1390