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Results: 1-25/29
Authors:
KIYOTA Y
YANO F
SUZUKI S
INADA T
Citation: Y. Kiyota et al., ROLE OF HYDROGEN DURING RAPID VAPOR-PHASE DOPING ANALYZED BY X-RAY PHOTOELECTRON-SPECTROSCOPY AND FOURIER-TRANSFORM INFRARED-ATTENUATED TOTAL-REFLECTION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(1), 1998, pp. 1-5
Authors:
TAGAWA Y
KIYOTA Y
YOSHIMURA Y
MOTOHASHI M
TANAYAMA S
Citation: Y. Tagawa et al., DISPOSITION OF THE NEW ANTIRHEUMATIC AGENT ETHYL -(1,2,4-TRIAZOL-1-YLMETHYL)QUINOLINE-3-CARBOXYLATE (TAK-603) IN RATS AND DOGS, Arzneimittel-Forschung, 48(7), 1998, pp. 750-757
Authors:
MOCHIZUKI A
MAKINO T
SHIROTO H
KIYOTA Y
YOSHIHARA T
Citation: A. Mochizuki et al., SURFACE ANCHORING INFLUENCE ON POLARIZATION SWITCHING PROPERTIES OF SSFLCS, Molecular crystals and liquid crystals science and technology. Section A, Molecular crystals and liquid crystals, 304, 1997, pp. 351-356
Authors:
MOCHIZUKI A
MAKINO T
SHIROTO H
KIYOTA Y
YOSHIHARA T
Citation: A. Mochizuki et al., THRESHOLD PROPERTIES OF SSFLC IN TERMS OF POLARIZATION STRUCTURES, Molecular crystals and liquid crystals science and technology. Section A, Molecular crystals and liquid crystals, 303, 1997, pp. 391-401
Authors:
IKEURA Y
TANAKA T
KIYOTA Y
MORIMOTO S
OGINO M
ISHIMARU T
KAMO I
DOI T
NATSUGARI H
Citation: Y. Ikeura et al., POTENT NK1 RECEPTOR ANTAGONISTS - SYNTHESIS AND ANTAGONISTIC ACTIVITYOF VARIOUS HETEROCYCLES WITH AN [3,5-BIS(TRIFLUOROMETHYL)BENZYL]-N-METHYLCARBAMOYL SUBSTITUENT, Chemical and Pharmaceutical Bulletin, 45(10), 1997, pp. 1642-1652
Authors:
KIYOTA Y
KONDO T
MAESHIBA Y
HASHIMOTO A
YAMASHITA KJ
YOSHIMURA Y
MOTOHASHI M
TANAYAMA S
Citation: Y. Kiyota et al., STUDIES ON THE METABOLISM OF THE NEW ANTIDIABETIC AGENT PIOGLITAZONE - IDENTIFICATION OF METABOLITES IN RATS AND DOGS, Arzneimittel-Forschung, 47(1), 1997, pp. 22-28
Authors:
MAESHIBA Y
KIYOTA Y
YAMASHITA KJ
YOSHIMURA Y
MOTOHASHI M
TANAYAMA S
Citation: Y. Maeshiba et al., DISPOSITION OF THE NEW ANTIDIABETIC AGENT PIOGLITAZONE IN RATS, DOGS,AND MONKEYS, Arzneimittel-Forschung, 47(1), 1997, pp. 29-35
Authors:
KIYOTA Y
NAKAMURA T
SUZUKI S
INADA T
Citation: Y. Kiyota et al., SHALLOW P-TYPE LAYERS IN SI BY RAPID VAPOR-PHASE DOPING FOR HIGH-SPEED BIPOLAR AND MOS APPLICATIONS, IEICE transactions on electronics, E79C(4), 1996, pp. 554-559
Authors:
MIYAO M
NAKAGAWA K
NAKAHARA H
KIYOTA Y
KONDO M
Citation: M. Miyao et al., RECENT PROGRESS OF HETEROSTRUCTURE TECHNOLOGIES FOR NOVEL SILICON DEVICES, Applied surface science, 102, 1996, pp. 360-371
Authors:
IMURA Y
KIYOTA Y
NAGAI Y
NISHIKAWA K
TERASHITA Z
Citation: Y. Imura et al., BENEFICIAL EFFECT OF CV-4151 (ISBOGREL), A THROMBOXANE A(2) SYNTHASE INHIBITOR, IN A RAT MIDDLE CEREBRAL-ARTERY THROMBOSIS MODEL (VOL 79, PG 95, 1995), Thrombosis research, 84(2), 1996, pp. 143-143
Authors:
IMURA Y
KIYOTA Y
NAGAI Y
NISHIKAWA K
TERASHITA Z
Citation: Y. Imura et al., BENEFICIAL EFFECT OF CV-4151 (ISBOGREL), A THROMBOXANE A(2) SYNTHASE INHIBITOR, IN A RAT MIDDLE CEREBRAL-ARTERY THROMBOSIS MODEL (VOL 79, PG 95, 1995), Thrombosis research, 83(1), 1996, pp. 111-112
Authors:
SHIBA T
TAMAKI Y
ONAI T
KIYOTA Y
KURE T
NAKAMURA T
Citation: T. Shiba et al., A VERY SMALL BIPOLAR-TRANSISTOR TECHNOLOGY WITH SIDEWALL POLYCIDE BASE ELECTRODE FOR ECL-CMOS LSPS, I.E.E.E. transactions on electron devices, 43(9), 1996, pp. 1357-1363
Authors:
ODA K
KIYOTA Y
Citation: K. Oda et Y. Kiyota, H-2 CLEANING OF SILICON-WAFERS BEFORE LOW-TEMPERATURE EPITAXIAL-GROWTH BY ULTRAHIGH VACUUM CHEMICAL VAPOR-DEPOSITION/, Journal of the Electrochemical Society, 143(7), 1996, pp. 2361-2364
Authors:
KIYOTA Y
NAKAMURA T
MURAKI K
NIWAYAMA H
INADA T
Citation: Y. Kiyota et al., BEHAVIOR OF ACTIVE AND INACTIVE BORON IN SI PRODUCED BY VAPOR-PHASE DOPING DURING SUBSEQUENT HYDROGEN ANNEALING, JPN J A P 1, 34(6A), 1995, pp. 2981-2985
Authors:
NAKAMURA T
SHIBA T
ONAI T
UCHINO T
KIYOTA Y
WASHIO K
HOMMA N
Citation: T. Nakamura et al., PROCESS AND DEVICE TECHNOLOGIES FOR HIGH-SPEED SELF-ALIGNED BIPOLAR-TRANSISTORS, IEICE transactions on electronics, E78C(9), 1995, pp. 1154-1164
Authors:
KAMIMURA K
SHIMADA K
WASHIO H
KATSU T
NAKAMURA K
HISAMATSU T
SAGA T
MATSUTANI T
UCHIDA Y
KIYOTA Y
Citation: K. Kamimura et al., HIGH-EFFICIENCY SINGLE-CRYSTAL SILICON SO LAR-CELLS, Sharp giho, (63), 1995, pp. 30-33
Authors:
IMURA Y
KIYOTA Y
NAGAI Y
NISHIKAWA K
TERASHITA Z
Citation: Y. Imura et al., BENEFICIAL EFFECT OF CV-4151 (ISBOGREL), A THROMBOXANE A(2) SYNTHASE INHIBITOR, IN A RAT MIDDLE CEREBRAL-ARTERY THROMBOSIS MODEL, Thrombosis research, 79(1), 1995, pp. 95-107
Authors:
NATSUGARI H
IKEURA Y
KIYOTA Y
ISHICHI Y
ISHIMARU T
SAGA O
SHIRAFUJI H
TANAKA T
KAMO I
DOI T
OTSUKA M
Citation: H. Natsugari et al., NOVEL, POTENT, AND ORALLY-ACTIVE SUBSTANCE-P ANTAGONISTS - SYNTHESIS AND ANTAGONIST ACTIVITY OF N-BENZYLCARBOXAMIDE DERIVATIVES OF PYRIDO[3,4-B]PYRIDINE, Journal of medicinal chemistry, 38(16), 1995, pp. 3106-3120
Authors:
YANO S
KIYOTA Y
YAMAMOTO M
WATANABE K
Citation: S. Yano et al., PHARMACOLOGICAL FEATURES OF NONADRENERGIC NONCHOLINERGIC (NANC) RELAXATION INDUCED BY ELECTRICAL VAGAL-STIMULATION IN ISOLATED MOUSE STOMACH, Japanese Journal of Pharmacology, 69(1), 1995, pp. 9-15
Authors:
UCHINO T
SHIBA T
KIKUCHI T
TAMAKI Y
WATANABE A
KIYOTA Y
Citation: T. Uchino et al., VERY-HIGH-SPEED SILICON BIPOLAR-TRANSISTORS WITH IN-SITU DOPED POLYSILICON EMITTER AND RAPID VAPOR-PHASE DOPING BASE, I.E.E.E. transactions on electron devices, 42(3), 1995, pp. 406-412
Authors:
ONAI T
NAKAZATO K
KIYOTA Y
NAKAMURA T
Citation: T. Onai et al., FULLY RADIATIVE CURRENT PATH STRUCTURE (FRACS) FOR SUB-0.1 MU-M EMITTER TRANSISTOR, I.E.E.E. transactions on electron devices, 42(1), 1995, pp. 23-30
Authors:
KIYOTA Y
NAKAMURA T
INADA T
Citation: Y. Kiyota et al., SUBQUARTER-MICROMETER PMOSFETS WITH 50-NM SOURCE AND DRAIN FORMED BY RAPID VAPOR-PHASE DOPING (RVD), IEICE transactions on electronics, E77C(3), 1994, pp. 362-366
Authors:
KIYOTA Y
NAKAMURA T
INADA T
Citation: Y. Kiyota et al., BORON DELTA-DOPING IN SI USING ATMOSPHERIC-PRESSURE CVD, Applied surface science, 82-3, 1994, pp. 400-404
Authors:
KIYOTA Y
NAKAMURA T
MURAKI K
INADA T
Citation: Y. Kiyota et al., PHOSPHORUS DIRECT DOPING FROM VAPOR-PHASE INTO SILICON FOR SHALLOW JUNCTIONS, Journal of the Electrochemical Society, 141(8), 1994, pp. 2241-2244
Authors:
KIYOTA Y
MATSUSHIMA M
KANEKO Y
KANETOMO M
TAMAKI Y
MURAKI K
INADA T
Citation: Y. Kiyota et al., ULTRASHALLOW P-TYPE LAYER FORMATION BY RAPID VAPOR-PHASE DOPING USINGA LAMP ANNEALING APPARATUS, Applied physics letters, 64(7), 1994, pp. 910-911